2N7002A-7 vs 2N7002,215

2N7002A-7と2N7002,215の詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002A-7 is a viable functional replacement candidate for the 2N7002,215 in most low-power switching applications, with both devices sharing identical N-channel MOSFET topology, SOT-23 footprint, and comparable voltage ratings. Designers should validate gate threshold spread and thermal derating margins before committing to volume production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002A-7

アナログ・デバイセズ

Lifecycle
Active
Stock
1569 個数
Package
SOT-23-3
Series
トランジスタ - FET、MOSFET - シングル
+BOM 見積依頼
Part B

2N7002,215

ネクスペリアUSA株式会社

Lifecycle
Active
Stock
6582 個数
Package
SOT-23-3
Series
トランジスタ - FET、MOSFET - シングル
+BOM 見積依頼

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

見積依頼 Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002A-7 2N7002,215
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 180mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 10V
Rds On(Max) @ Id Vgs 6Ohm @ 115mA, 5V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2V @ 250µA 2.5V @ 250µA
Vgs(Max) ±20V ±30V
Input Capacitance(Ciss)(Max) @ Vds 23 pF @ 25 V 50 pF @ 10 V
Power Dissipation (Max) 370mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchMOS™
Compare 見積依頼