Part A
2N7002L
オンセミコンダクター社
- Lifecycle
- Active
- Stock
- 2923 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
Replacement verdict
Compatible functional replacement candidate
The 2N7002,215 and 2N7002L are functionally equivalent N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 300 mA continuous drain current, SOT-23 package, and RDS(on) characteristics. Both are suitable for low-side switching, level shifting, and small-signal load control. Designers may treat them as interchangeable in most applications, though gate threshold voltage spread and input capacitance should be validated against the specific drive circuit.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002,215
ネクスペリアUSA株式会社
- Lifecycle
- Active
- Stock
- 6582 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002L | 2N7002,215 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 115mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 10V |
| Rds On(Max) @ Id Vgs | 7.5Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±20V | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | 50 pF @ 10 V |
| Power Dissipation (Max) | 200mW (Ta) | 830mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | - | TrenchMOS™ |