Part A
2N7002L
オンセミコンダクター社
- Lifecycle
- Active
- Stock
- 2923 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
Replacement verdict
Compatible functional replacement candidate
The 2N7002-7-F and 2N7002L are functionally equivalent N-channel MOSFETs sharing the same SOT-23 footprint, 60 V drain-source voltage rating, and 300 mA continuous drain current capability. Both devices are suitable for low-side switching, level shifting, and small-signal amplification applications. Designers should verify gate threshold voltage tolerance and thermal derating characteristics against their specific circuit requirements before committing to a drop-in substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002-7-F
アナログ・デバイセズ
- Lifecycle
- Active
- Stock
- 5757 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002-7-F | 2N7002L | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the device can block; must meet or exceed circuit voltage for safe operation. |
| Continuous Drain Current (Id) | 115 mA | 115 mA | Determines the maximum load current the MOSFET can handle continuously. |
| Drain-Source On-Resistance (Rds(on)) | 7.5 Ω @ 10 V, 500 mA | 7.5 Ω @ 10 V, 500 mA | Lower on-resistance reduces conduction losses and heat generation during operation. |
| Gate Threshold Voltage (Vgs(th)) | 1 V to 2.5 V | 1 V to 2.5 V | Defines the gate voltage needed to turn the device on; affects compatibility with logic-level drive circuits. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can damage the gate oxide. |
| Power Dissipation (Pd) | 200 mW | 200 mW | Maximum power the package can dissipate; limits thermal design and continuous current capability. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; higher capacitance slows switching. |
| Package / Mounting | SOT-23, Surface Mount | SOT-23, Surface Mount | Physical form factor and mounting method must match the PCB footprint for direct substitution. |
| Operating Junction Temperature | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating range; must cover the application's ambient and self-heating conditions. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002L | 2N7002-7-F |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 115mA (Ta) | 115mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 7.5Ohm @ 500mA, 10V | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 200mW (Ta) | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the 2N7002-7-F and the 2N7002L?
The 2N7002-7-F is a Diodes Incorporated N-channel enhancement mode MOSFET supplied in the SOT-23 package and is typically provided on 7-inch tape and reel. The 2N7002L is an ON Semiconductor (onsemi) N-channel enhancement mode MOSFET also in the SOT-23 package. Both share the same basic 60 V, 115 mA small-signal MOSFET ratings, but they differ in manufacturer, datasheet specifications, and packaging/reel options.
Are the 2N7002-7-F and 2N7002L electrically interchangeable?
They are functionally similar small-signal N-channel MOSFETs with comparable voltage and current ratings, but they are not guaranteed to be identical in all parameters. Designers should compare the drain-source voltage, continuous drain current, on-resistance, gate threshold voltage, and input/output capacitance from each manufacturer's datasheet before substituting one for the other.
What is the drain-source voltage rating of these devices?
Both the 2N7002-7-F and the 2N7002L are rated for a maximum drain-source voltage (VDSS) of 60 V, which is the standard rating for the 2N7002 family of small-signal MOSFETs.
What is the continuous drain current rating for the 2N7002-7-F and 2N7002L?
Both devices are typically rated for a continuous drain current (ID) of approximately 115 mA at 25 °C, consistent with the standard 2N7002 specification. Actual allowable current depends on PCB thermal conditions and derating.
Do the 2N7002-7-F and 2N7002L use the same package and pinout?
Yes. Both are offered in the SOT-23 (TO-236) surface-mount package with the standard small-signal MOSFET pinout: pin 1 = gate, pin 2 = source, pin 3 = drain. This allows them to share the same PCB footprint.
What is the difference between the "-7-F" suffix and the "L" suffix?
The "-7-F" suffix on the 2N7002-7-F indicates Diodes Incorporated's tape-and-reel packaging option (7-inch reel) and a lead-free/green molding compound designation. The "L" suffix on the 2N7002L is part of onsemi's ordering nomenclature and does not indicate a different die; it is used to distinguish the onsemi part number from other manufacturers' 2N7002 variants.
Can the 2N7002-7-F and 2N7002L be used in the same applications?
Both are intended for low-power switching and signal-level applications such as level shifting, load switching, and small relay or LED driving. Because their core ratings are similar, they can often serve the same function, but final selection should be based on each manufacturer's datasheet parameters and the specific design requirements.
Are the gate threshold voltages of the 2N7002-7-F and 2N7002L the same?
Both are specified with a gate threshold voltage (VGS(th)) in the range of approximately 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA, which is typical for the 2N7002 family. However, exact minimum, typical, and maximum values should be confirmed from the respective manufacturer datasheets.
Which part should be chosen for a new design, the 2N7002-7-F or the 2N7002L?
Selection depends on availability, pricing, packaging preferences, and the specific electrical limits required by the design. Both are established 2N7002-family MOSFETs from reputable manufacturers; the 2N7002-7-F offers Diodes Incorporated's 7-inch reel packaging, while the 2N7002L is onsemi's equivalent offering. Verify current datasheet parameters and supply-chain availability before finalizing.