2N7002A-7 vs 2N7002

2N7002A-7と2N7002の詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002A-7 is a functionally compatible replacement candidate for the 2N7002 in most low-power switching applications, with identical package footprint, channel configuration, and voltage ratings. Designers should validate gate threshold spread and thermal behavior under their specific drive conditions before committing to volume production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002A-7

アナログ・デバイセズ

Lifecycle
Active
Stock
1569 個数
Package
SOT-23-3
Series
トランジスタ - FET、MOSFET - シングル
Part B

2N7002

RFE/フューゼテック

Lifecycle
Active
Stock
1470 個数
Package
SOT-23
Series
トランジスタ - FET、MOSFET - シングル

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002A-7 2N7002
Part Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 180mA (Ta) 200mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 6Ohm @ 115mA, 5V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2V @ 250µA 3V @ 250µA
Vgs(Max) ±20V ±18V
Input Capacitance(Ciss)(Max) @ Vds 23 pF @ 25 V 43 pF @ 25 V
Power Dissipation (Max) 370mW (Ta) 350mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - STripFET™
Gate Charge(Qg)(Max) @ Vgs - 2 nC @ 5 V