2N7002A-7
アナログ・デバイセズ
- Lifecycle
- Active
- Stock
- 1569 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
2N7002A-7と2N7002DWの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。
Replacement verdict
The 2N7002DW and 2N7002A-7 are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002 electrical family, and SOT-363 surface-mount footprint, making them strong functional replacement candidates. Designers should validate gate threshold spread, RDS(on) at the target VGS, and continuous drain current margin against the specific application before committing to a drop-in substitution.
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | 2N7002A-7 | 2N7002DW |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60V |
| Current - Continuous Drain(Id) @ 25°C | 180mA (Ta) | - |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | - |
| Rds On(Max) @ Id Vgs | 6Ohm @ 115mA, 5V | - |
| Vgs(th)(Max) @ Id | 2V @ 250µA | - |
| Vgs(Max) | ±20V | - |
| Input Capacitance(Ciss)(Max) @ Vds | 23 pF @ 25 V | - |
| Power Dissipation (Max) | 370mW (Ta) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | - | 2N7002 |
| Configuration | - | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Current - Continuous Drain (Id) @ 25°C | - | 115mA |
| Rds On (Max) @ Id, Vgs | - | 7.5Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | - | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | - | 50pF @ 25V |
| Power - Max | - | 200mW |
| Packaging | - | Cut Tape (CT), Tape & Reel (TR) |