Part A
2N7002ET1G
オンセミコンダクター社
- Lifecycle
- Active
- Stock
- 4059 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
Replacement verdict
Compatible functional replacement candidate
The 2N7002ET1G and 2N7002CK are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional substitute for the 2N7002ET1G in most low-power switching applications. Designers should verify gate threshold, on-resistance, and thermal characteristics against their specific circuit requirements before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
On-Resistance
Validation required
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002ET1G | 2N7002CK |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 60 V | - |
| Current - Continuous Drain(Id) @ 25°C | 260mA (Ta) | - |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | - |
| Rds On(Max) @ Id Vgs | 2.5Ohm @ 240mA, 10V | - |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | - |
| Gate Charge(Qg)(Max) @ Vgs | 0.81 nC @ 5 V | - |
| Vgs(Max) | ±20V | - |
| Input Capacitance(Ciss)(Max) @ Vds | 26.7 pF @ 25 V | - |
| Power Dissipation (Max) | 300mW (Tj) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |