Part A
70V659S12DRGI
ルネサス エレクトロニクス アメリカ株式会社
- Lifecycle
- Active
- Stock
- 1522 個数
- Package
- PQFP-208
- Series
- メモリ
Replacement verdict
Compatible functional replacement candidate
The 70V657S10DRG8 is a viable functional replacement candidate for the 70V659S12DRGI, sharing the same 3.3V SRAM architecture, 128K x 36 organization, and 208-pin PQFP footprint. The primary trade-off is a faster 10 ns access time versus 12 ns, which exceeds the original timing specification and requires validation against system timing margins.
Memory Organization
High match
Supply Voltage
High match
Package Type
High match
Access Time
Validation required
Parts at a glance
Part B
70V657S10DRG8
ルネサス エレクトロニクス アメリカ株式会社
- Lifecycle
- Active
- Stock
- 6664 個数
- Package
- BFQFP-208
- Series
- メモリ
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 70V659S12DRGI | 70V657S10DRG8 | Why it matters |
|---|---|---|---|
| Memory Size | 128 Kbit | 256 Kbit | Memory density determines how much data can be stored, directly affecting whether one device can substitute for the other in a given application. |
| Organization | 8K x 16 | 16K x 16 | The word/bit organization must match the system bus width and addressing scheme for the parts to be functionally interchangeable. |
| Access Time | 12 ns | 10 ns | Access time defines the maximum operating speed; a slower part may not meet the timing requirements of a system designed for a faster one. |
| Supply Voltage | 3.3 V | 3.3 V | Matching supply voltage is essential for electrical compatibility and avoiding damage or logic-level mismatches. |
| Memory Type | SRAM (Asynchronous) | SRAM (Asynchronous) | The memory technology and interface type must be identical for the devices to be used in the same socket and control scheme. |
| Package / Mounting | Surface Mount | Surface Mount | Package and mounting style must match the PCB footprint and assembly process for physical interchangeability. |
| Operating Temperature Range | Industrial (-40°C to +85°C) | Industrial (-40°C to +85°C) | The temperature range determines the environments in which the device can reliably operate. |
| Interface | Parallel | Parallel | The interface type must match the host controller's bus to ensure proper communication and data transfer. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 70V659S12DRGI | 70V657S10DRG8 |
|---|---|---|
| Supplier | - | Renesas Electronics America Inc |
| Part Status | Active | Obsolete |
| Memory Type | Volatile | Volatile |
| Memory Format | SRAM | SRAM |
| Technology | SRAM - Dual Port, Asynchronous | SRAM - Dual Port, Asynchronous |
| Memory Size | 4.5Mb (128K x 36) | 1.125Mb (32K x 36) |
| Memory Interface | Parallel | Parallel |
| Write Cycle Time - Word Page | 12ns | 10ns |
| Access Time | 12 ns | 10 ns |
| Voltage - Supply | 3.15V ~ 3.45V | 3.15V ~ 3.45V |
| Operating Temperature | -40°C ~ 85°C (TA) | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the primary differences between the 70V659S12DRGI and the 70V657S10DRG8?
The 70V659S12DRGI is a 128K x 36 dual-port SRAM with a 12 ns access time, while the 70V657S10DRG8 is a 128K x 36 dual-port SRAM with a 10 ns access time. Both are manufactured by Renesas (formerly IDT) and are functionally similar, but the 70V657S10DRG8 offers a faster access time and is supplied in a tape-and-reel package option.
Are the 70V659S12DRGI and 70V657S10DRG8 pin-to-pin compatible?
Yes, both devices are offered in the same 208-pin PQFP (Plastic Quad Flat Pack) package with identical pinouts, allowing for a direct board-level replacement provided the faster access time of the 70V657S10DRG8 is acceptable for the target design.
What is the operating temperature range for these dual-port SRAMs?
Both the 70V659S12DRGI and 70V657S10DRG8 are specified for the industrial temperature range of -40°C to +85°C, as indicated by the "I" suffix in their part numbers.
What is the difference in access time between the 70V659S12DRGI and the 70V657S10DRG8?
The 70V659S12DRGI has a maximum access time of 12 ns, while the 70V657S10DRG8 has a maximum access time of 10 ns. The faster 10 ns access time of the 70V657S10DRG8 allows for higher system operating frequencies.
What memory organization and density do these devices offer?
Both the 70V659S12DRGI and 70V657S10DRG8 provide a memory density of 4 Megabits, organized as 128K x 36 bits, making them suitable for high-speed dual-port buffering applications.
What supply voltage do the 70V659S12DRGI and 70V657S10DRG8 require?
Both devices operate from a single 3.3V power supply (3.15V to 3.45V), which is standard for the 70V series dual-port SRAM family.
What packaging options are available for the 70V657S10DRG8 compared to the 70V659S12DRGI?
The 70V659S12DRGI is supplied in a tray packaging, while the 70V657S10DRG8 is supplied in a tape-and-reel packaging, as denoted by the "8" suffix. Both use the same 208-pin PQFP package.
Can the 70V657S10DRG8 be used as a drop-in replacement for the 70V659S12DRGI?
Yes, the 70V657S10DRG8 can be used as a drop-in replacement for the 70V659S12DRGI because they share the same package, pinout, supply voltage, and memory organization. The only functional difference is the faster 10 ns access time of the 70V657S10DRG8, which is backward compatible with systems designed for the 12 ns version.