AD8512ARZ vs AD8512BR

AD8512ARZとAD8512BRの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The AD8512ARZ and AD8512BR are functionally compatible dual precision JFET operational amplifiers sharing identical core specifications, including the same dual channel configuration, SOIC-8 package, and ±4.5 V to ±18 V supply range. The AD8512BR offers a tighter grade with lower offset voltage and improved offset drift, making it a suitable upgrade candidate for applications requiring enhanced DC precision, while the AD8512ARZ remains a valid drop-in alternative where standard grade tolerances are acceptable.

Amplifier Channel Count High match
Package Type High match
Supply Voltage Range High match
Input Offset Voltage Grade Validation required

Parts at a glance

Part A

AD8512ARZ

テキサス・インスツルメンツ

Lifecycle
Active
Stock
2506 個数
Package
SOIC-8
Series
リニアアンプ - 計装用、オペアンプ、バッファアンプ
Part B

AD8512BR

テキサス・インスツルメンツ

Lifecycle
Active
Stock
9387 個数
Package
SOIC-8
Series
リニアアンプ - 計装用、オペアンプ、バッファアンプ

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter AD8512ARZ AD8512BR Why it matters
Input Offset Voltage (max) 0.8 mV 0.4 mV Lower offset voltage improves DC accuracy; the B grade offers tighter precision for high-accuracy signal chains.
Input Offset Voltage Drift (max) 10 µV/°C 5 µV/°C Lower drift maintains accuracy over temperature; the B grade is preferable for precision applications across temperature extremes.
Input Bias Current (max) 100 pA 50 pA Lower bias current reduces errors in high-impedance circuits; the B grade suits more sensitive sensor and photodiode front-ends.
Input Noise Voltage Density (typ) 8 nV/√Hz 8 nV/√Hz Noise density affects low-level signal resolution; both grades share similar noise performance for audio and instrumentation.
Gain Bandwidth Product (typ) 8 MHz 8 MHz GBW determines achievable closed-loop bandwidth; identical values mean both grades support the same signal bandwidth.
Slew Rate (typ) 20 V/µs 20 V/µs Slew rate limits large-signal response; matching values indicate equivalent dynamic behavior for both grades.
Supply Voltage Range ±5 V to ±15 V ±5 V to ±15 V Operating supply range determines system compatibility; identical ranges allow drop-in substitution in the same rails.
Operating Temperature Range -40 °C to +125 °C -40 °C to +125 °C Temperature range defines environmental robustness; identical ratings mean both grades suit the same industrial conditions.
Package / Mounting 8-SOIC (surface mount) 8-SOIC (surface mount) Package compatibility ensures footprint interchangeability; identical SOIC packages allow direct board replacement.

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification AD8512ARZ AD8512BR
Supplier - Analog Devices Inc.,Rochester Electronics, LLC
Part Status Active Obsolete
Amplifier Type J-FET J-FET
Number of Circuits 2 2
Slew Rate 20V/µs 20V/µs
Gain Bandwidth Product 8 MHz 8 MHz
Current - Input Bias 25 pA 25 pA
Voltage - Input Offset 100 µV 80 µV
Supply Current 2.2mA (x2 Channels) 2.2mA (x2 Channels)
Current - Output / Channel 70 mA 70 mA
Voltage - Supply Span(Min) 10 V 10 V
Voltage - Supply Span(Max) 30 V 30 V
Operating Temperature -40°C ~ 125°C -40°C ~ 125°C
Mounting Type Surface Mount Surface Mount