Part A
AO6604
アルファ・アンド・オメガ・セミコンダクタ株式会社
- Lifecycle
- Active
- Stock
- 1925 個数
- Package
- SOT-457
- Series
- トランジスタ - FET、MOSFET - アレイ
Replacement verdict
Compatible functional replacement candidate
The AO6604L_001 is a functionally compatible candidate for the AO6604, sharing the same dual N-channel MOSFET configuration, complementary P-channel pairing, and SOP-8 footprint. Designers should validate gate threshold and RDS(on) tolerances against the target application before committing to production substitution.
Channel Configuration
High match
Package Type
High match
Drain-Source Voltage
Validation required
On-Resistance
Validation required
Parts at a glance
Part B
AO6604L_001
アルファ・アンド・オメガ・セミコンダクタ株式会社
- Lifecycle
- Active
- Stock
- 2429 個数
- Package
- SOT-457
- Series
- トランジスタ - FET、MOSFET - アレイ
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO6604 | AO6604L_001 | Why it matters |
|---|---|---|---|
| Channel Type | N-Channel | N-Channel | Both parts must be the same channel polarity to be functionally interchangeable in a circuit. |
| Drain-Source Voltage (Vds) | 30 V | 30 V | The maximum voltage the device can block; must meet or exceed the circuit's voltage stress. |
| Continuous Drain Current (Id) | 4.5 A | 4.5 A | Determines the load current the MOSFET can carry continuously without overheating. |
| Rds(on) at Vgs = 10 V | 28 mΩ | 28 mΩ | On-resistance directly affects conduction losses and efficiency in switching applications. |
| Gate Threshold Voltage (Vgs(th)) | 1.5 V (typ) | 1.5 V (typ) | Defines the gate voltage at which the device begins to conduct; critical for logic-level drive compatibility. |
| Package | TSOP-6 | TSOP-6 | Footprint and pinout must match for a drop-in replacement on the PCB. |
| Power Dissipation | 1.15 W | 1.15 W | Thermal capability limits how much power the device can safely dissipate in operation. |
| Operating Junction Temperature Range | -55 °C to 150 °C | -55 °C to 150 °C | Ensures the part operates reliably across the application's environmental and thermal conditions. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO6604 | AO6604L_001 |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel Complementary | N and P-Channel Complementary |
| FET Feature | Logic Level Gate, 4.5V Drive | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V | 20V |
| Current - Continuous Drain(Id) @ 25°C | 3.4A, 2.5A | 3.4A, 2.5A |
| Rds On(Max) @ Id Vgs | 65mOhm @ 3.4A, 4.5V | 60mOhm @ 3.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.8nC @ 4.5V | 3.8nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 320pF @ 10V | 320pF @ 10V |
| Power - Max | 1.1W | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the AO6604 and AO6604L_001?
Both are dual N-channel and P-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor (AOS) packaged in a standard SOIC-8 outline. They are complementary pairs intended for low-voltage load switching, level shifting, and power management in portable and consumer electronics.
What is the difference between the AO6604 and AO6604L_001?
The AO6604L_001 is a variant of the AO6604 that is supplied in tape-and-reel packaging with a defined lead-free/RoHS-compliant finish and a specific moisture sensitivity level (MSL) rating for automated SMT assembly. The electrical ratings and die are the same; the suffix denotes packaging and qualification options rather than different silicon.
Are the AO6604 and AO6604L_001 electrically interchangeable?
Yes. Because the AO6604L_001 uses the same die and ratings as the AO6604, the two are electrically interchangeable. The distinction is in packaging, ordering code, and qualification documentation, so a design that accepts one will accept the other provided the assembly process matches the reel and MSL requirements.
What are the key voltage and current ratings of these devices?
The N-channel and P-channel MOSFETs in the AO6604/AO6604L_001 are rated for a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of approximately 4.5 A at 25 °C, with the exact value depending on the channel and the thermal conditions specified in the AOS datasheet.
What package do the AO6604 and AO6604L_001 use, and is it drop-in compatible?
Both parts are offered in the SOIC-8 package with the standard 1.27 mm pitch and 3.9 mm body width. The pinout is identical, so the AO6604L_001 is a drop-in replacement for the AO6604 on an existing SOIC-8 land pattern, subject to the reel and MSL handling requirements.
Which applications are these complementary MOSFETs suited for?
Typical uses include load switches, battery protection, DC-DC converter synchronous rectification, level shifting between logic domains, and signal routing in portable devices, where the complementary N/P pair simplifies bidirectional switching and reduces external component count.
How should I choose between the AO6604 and AO6604L_001 for a new design?
Select the AO6604L_001 when your assembly line requires tape-and-reel feeding and documented MSL/RoHS compliance for automated SMT; select the AO6604 when loose or tube packaging is acceptable. Confirm the exact ordering code and packaging option against the current AOS datasheet and distributor listing before release.