Part A
APTGT300A60TG
マイクロチップ・テクノロジー
- Lifecycle
- Active
- Stock
- 2546 個数
- Package
- SP-4
- Series
- トランジスタ - IGBT - モジュール
Replacement verdict
Not a drop-in replacement
The APTGT300A60TG and APTGT100DA60TG are not drop-in replacements for one another. Although both are 600 V IGBT power modules from the same manufacturer family, they differ fundamentally in current rating, circuit topology, and package configuration, so a direct substitution is not feasible without redesign of the surrounding power stage and thermal management.
Different current rating
Different circuit topology
Different package configuration
Different thermal design
Parts at a glance
Part B
APTGT100DA60TG
マイクロセミコーポレーション
- Lifecycle
- Active
- Stock
- 8240 個数
- Package
- SP-4
- Series
- トランジスタ - IGBT - モジュール
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | APTGT300A60TG | APTGT100DA60TG | Why it matters |
|---|---|---|---|
| Collector Current (Ic) at Tc=80°C | 300 A | 100 A | Rated current determines the load the device can carry; a 3x difference means these are not directly substitutable in high-current designs. |
| Configuration | Single switch (Trench + Field Stop IGBT) | Dual boost chopper (IGBT + diode) | The internal topology differs; a single-switch device cannot directly replace a dual boost chopper module without circuit redesign. |
| Collector-Emitter Voltage (Vces) | 600 V | 600 V | Blocking voltage must meet or exceed the bus voltage; both are rated for 600 V systems. |
| Vce(sat) at rated current | ~1.9 V (typical at 300 A) | ~1.9 V (typical at 100 A) | Saturation voltage affects conduction losses; similar values indicate comparable efficiency per amp, but at very different current levels. |
| Power Dissipation (Ptot) at Tc=25°C | ~1500 W | ~500 W | Thermal capability scales with die size; the higher-power part can dissipate more heat, affecting heatsink and thermal design. |
| Package | SP6 (SP1-style power module) | SP6 (SP1-style power module) | Package footprint and pinout must match for drop-in replacement; both use the same SP6 family housing. |
| Gate-Emitter Voltage (Vge) max | ±20 V | ±20 V | Gate drive limits must be respected; identical ratings allow the same gate driver design. |
| Operating Junction Temperature (Tj) | -40 to +175 °C | -40 to +175 °C | Junction temperature range defines thermal headroom and reliability margin; identical ranges simplify thermal qualification. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | APTGT300A60TG | APTGT100DA60TG |
|---|---|---|
| Supplier | - | Microchip Technology |
| Part Status | Active | Discontinued at Digi-Key |
| IGBT Type | Trench Field Stop | Trench Field Stop |
| Configuration | Half Bridge | Single |
| Voltage - Collector Emitter Breakdown(Max) | 600 V | 600 V |
| Current - Collector(Ic)(Max) | 430 A | 150 A |
| Power - Max | 935 W | 340 W |
| Vce(on)(Max) @ Vge Ic | 1.9V @ 15V, 300A | 1.9V @ 15V, 100A |
| Current - Collector Cutoff(Max) | 350 µA | 250 µA |
| Input Capacitance(Cies) @ Vce | 18.4 nF @ 25 V | 6.1 nF @ 25 V |
| Input | Standard | Standard |
| NTC Thermistor | Yes | Yes |
| Operating Temperature | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount | Chassis Mount |
Frequently asked questions
What are the key differences between the APTGT300A60TG and APTGT100DA60TG?
The APTGT300A60TG is a single 600 V, 300 A IGBT in a T-Max package, while the APTGT100DA60TG is a 600 V, 100 A dual (phase-leg) IGBT module in a D3 package. The APTGT300A60TG provides a single switch with higher current rating, whereas the APTGT100DA60TG integrates two IGBTs in a half-bridge configuration with lower per-switch current rating.
Are the APTGT300A60TG and APTGT100DA60TG electrically interchangeable?
No. The APTGT300A60TG is a single-switch device rated at 300 A, while the APTGT100DA60TG contains two 100 A IGBTs in a half-bridge topology. The different current ratings, internal topology, and package footprints prevent direct electrical or mechanical interchange without redesign.
What is the collector-emitter voltage rating of both devices?
Both the APTGT300A60TG and APTGT100DA60TG are rated for a collector-emitter voltage (VCES) of 600 V, making them suitable for 400 V-class inverter and motor drive applications with appropriate derating.
What package types do the APTGT300A60TG and APTGT100DA60TG use?
The APTGT300A60TG is supplied in the T-Max package, a single-device power module format. The APTGT100DA60TG is supplied in the D3 package, a dual-device half-bridge module format. The package outlines and pin configurations differ, so PCB land patterns are not compatible.
Which device is better suited for a three-phase inverter design?
The APTGT100DA60TG, being a dual half-bridge module, allows three modules to form a complete three-phase inverter bridge with matched devices per phase leg. The APTGT300A60TG, as a single switch, would require six discrete devices and external interconnection for the same topology, though it offers higher per-switch current capability.
Do both devices include a freewheeling diode?
Yes. Both the APTGT300A60TG and APTGT100DA60TG are IGBT devices with integrated anti-parallel freewheeling diodes, which are required for inductive load commutation in inverter and chopper circuits.
Can the APTGT100DA60TG replace two APTGT300A60TG devices in an existing design?
No. The APTGT100DA60TG is rated at 100 A per switch, while the APTGT300A60TG is rated at 300 A. Substituting two 100 A half-bridge modules for 300 A single switches would reduce current capability and require verification of thermal, gate drive, and package compatibility against the original design.