Part A
BAS16HT3G
オンセミコンダクター社
- Lifecycle
- Active
- Stock
- 6245 個数
- Package
- SOD-323
- Series
- ダイオード - 整流器 - シングル
Parts at a glance
Part B
BAS16UE6727HTSA1
インフィニオンテクノロジーズ
- Lifecycle
- Active
- Stock
- 8720 個数
- Package
- SOT-457
- Series
- ダイオード - 整流器 - アレイ
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | BAS16HT3G | BAS16UE6727HTSA1 |
|---|---|---|
| Supplier | onsemi,Rochester Electronics, LLC | Infineon Technologies,Rochester Electronics, LLC |
| Series | - | Automotive, AEC-Q101 |
| Part Status | Active | Last Time Buy |
| Diode Configuration | - | 3 Independent |
| Diode Type | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 80 V |
| Current - Average Rectified(Io)(per Diode) | - | 100mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA | 1.2 V @ 100 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 6 ns | 4 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 75 V | 1 µA @ 75 V |
| Operating Temperature - Junction | - | 150°C (Max) |
| Mounting Type | Surface Mount | Surface Mount |
| Current - Average Rectified(Io) | 200mA (DC) | - |
| Capacitance @ Vr F | 2pF @ 0V, 1MHz | - |