Part A
JANTX2N2222A
マイクロチップ・テクノロジー
- Lifecycle
- Active
- Stock
- 5916 個数
- Package
- TO-18-3
- Series
- トランジスタ - バイポーラ (BJT) - シングル
Parts at a glance
Part B
JANTX2N3029
マイクロセミコーポレーション
- Lifecycle
- Active
- Stock
- 5197 個数
- Package
- TO-206AA, TO-18-3 Metal Can
- Series
- サイリスタ - サイリスタ
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | JANTX2N2222A | JANTX2N3029 |
|---|---|---|
| Supplier | - | Microchip Technology |
| Series | Military, MIL-PRF-19500/255 | Military, MIL-S-19500/419 |
| Part Status | Active | Active |
| Voltage - Off State | - | 1 kV |
| Voltage - Gate Trigger(Vgt)(Max) | - | 800 mV |
| Current - Gate Trigger(Igt)(Max) | - | 200 µA |
| Voltage - On State(Vtm)(Max) | - | 1.5 V |
| Current - On State(It(RMS))(Max) | - | 250 mA |
| Current - Hold(Ih)(Max) | - | 5 mA |
| Current - Off State(Max) | - | 100 nA |
| Current - Non Rep Surge5060 Hz(Itsm) | - | 5A, 8A |
| SCR Type | - | Sensitive Gate |
| Operating Temperature | -65°C ~ 200°C (TJ) | -65°C ~ 150°C |
| Mounting Type | Through Hole | Through Hole |
| Transistor Type | NPN | - |
| Current - Collector(Ic)(Max) | 800 mA | - |
| Voltage - Collector Emitter Breakdown(Max) | 50 V | - |
| Vce Saturation(Max) @ Ib Ic | 1V @ 50mA, 500mA | - |
| Current - Collector Cutoff(Max) | 50nA | - |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 150mA, 10V | - |
| Power - Max | 500 mW | - |