Part A
JANTX2N6796
マイクロセミコーポレーション
- Lifecycle
- Active
- Stock
- 2949 個数
- Package
- TO-205AF-3
- Series
- トランジスタ - FET、MOSFET - シングル
Parts at a glance
Part B
JANTX2N2060
マイクロチップ・テクノロジー
- Lifecycle
- Active
- Stock
- 7218 個数
- Package
- TO-78-6
- Series
- トランジスタ - バイポーラ (BJT) - アレイ
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | JANTX2N6796 | JANTX2N2060 |
|---|---|---|
| Supplier | - | Microchip Technology |
| Series | Military, MIL-PRF-19500/557 | Military, MIL-PRF-19500/270 |
| Part Status | Obsolete | Active |
| Transistor Type | - | 2 NPN (Dual) |
| Current - Collector(Ic)(Max) | - | 500mA |
| Voltage - Collector Emitter Breakdown(Max) | - | 60V |
| Vce Saturation(Max) @ Ib Ic | - | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | - | 10µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | - | 50 @ 10mA, 5V |
| Power - Max | - | 600mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 100 V | - |
| Current - Continuous Drain(Id) @ 25°C | 8A (Tc) | - |
| Drive Voltage(Max Rds On Min Rds On) | 10V | - |
| Rds On(Max) @ Id Vgs | 195mOhm @ 8A, 10V | - |
| Vgs(th)(Max) @ Id | 4V @ 250µA | - |
| Gate Charge(Qg)(Max) @ Vgs | 28.51 nC @ 10 V | - |
| Vgs(Max) | ±20V | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) | - |