Part A
JANTX2N7236
マイクロセミコーポレーション
- Lifecycle
- Active
- Stock
- 2916 個数
- Package
- TO-254AA
- Series
- トランジスタ - FET、MOSFET - シングル
Parts at a glance
Part B
JANTXV2N2857
マイクロセミコーポレーション
- Lifecycle
- Active
- Stock
- 9036 個数
- Package
- TO-72-3
- Series
- トランジスタ - バイポーラ (BJT) - RF
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | JANTX2N7236 | JANTXV2N2857 |
|---|---|---|
| Supplier | - | Microchip Technology |
| Series | Military, MIL-PRF-19500/595 | Military, MIL-PRF-19500/343 |
| Part Status | Obsolete | Obsolete |
| Transistor Type | - | NPN |
| Voltage - Collector Emitter Breakdown(Max) | - | 15V |
| Frequency - Transition | - | 500MHz |
| Noise Figure(d B Typ @ f) | - | 4.5dB @ 450MHz |
| Gain | - | 12.5dB ~ 21dB @ 450MHz |
| Power - Max | - | 200mW |
| DC Current Gain(h FE)(Min) @ Ic Vce | - | 30 @ 3mA, 1V |
| Current - Collector(Ic)(Max) | - | 40mA |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| FET Type | P-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 100 V | - |
| Current - Continuous Drain(Id) @ 25°C | 18A (Tc) | - |
| Drive Voltage(Max Rds On Min Rds On) | 10V | - |
| Rds On(Max) @ Id Vgs | 220mOhm @ 18A, 10V | - |
| Vgs(th)(Max) @ Id | 4V @ 250µA | - |
| Gate Charge(Qg)(Max) @ Vgs | 60 nC @ 10 V | - |
| Vgs(Max) | ±20V | - |
| Power Dissipation (Max) | 4W (Ta), 125W (Tc) | - |