Part A
NCP51530BDR2G
オンセミコンダクター社
- Lifecycle
- Active
- Stock
- 4017 個数
- Series
- Power Management (PMIC) - Full, Half-Bridge (H Bridge) Drivers
NCP51530BDR2GとNCP5106ADR2Gの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。
オンセミコンダクター社
オンセミコンダクター社
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | NCP51530BDR2G | NCP5106ADR2G |
|---|---|---|
| Part Status | Active | Active |
| Driven Configuration | - | Half-Bridge |
| Channel Type | - | Independent |
| Number of Drivers | - | 2 |
| Gate Type | - | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 17V | 10V ~ 20V |
| Logic Voltage - VILVIH | - | 0.8V, 2.3V |
| Current - Peak Output(Source Sink) | - | 250mA, 500mA |
| Input Type | - | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | - | 600 V |
| Rise / Fall Time(Typ) | - | 85ns, 35ns |
| Operating Temperature | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | NCP51530 | - |
| Output Configuration | Half Bridge (2) | - |
| Applications | General Purpose | - |
| Interface | Logic, PWM | - |
| Load Type | Inductive, Capacitive | - |
| Technology | Power MOSFET | - |
| Current - Output / Channel | 3.5A | - |
| Current - Peak Output | 3A | - |
| Voltage - Load | 700V | - |
| Features | Bootstrap Circuit | - |
| Fault Protection | UVLO | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |