Part A
SI2303CDS-T1-GE3
ビシェイ・シリコニクス
- Lifecycle
- Active
- Stock
- 5876 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | SI2303CDS-T1-GE3 | SI2301-TP |
|---|---|---|
| Series | TrenchFET® | - |
| Part Status | Active | Active |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 2.7A (Tc) | 2.8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 190mOhm @ 1.9A, 10V | 120mOhm @ 2.8A, 4.5V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8 nC @ 10 V | 14.5 nC @ 4.5 V |
| Vgs(Max) | ±20V | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 155 pF @ 15 V | 880 pF @ 6 V |
| Power Dissipation (Max) | 1W (Ta), 2.3W (Tc) | 1.25W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |