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2N7002BKW
+BOMMOSFETs
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メーカーNexperia
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メーカー品番 #2N7002BKW
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在庫状況15631
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
概要
Description
Key features of the 2N7002BKW include a drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of up to 200mA, and a low on-state resistance (R_DS(on)), which ensures minimal power loss during operation. The MOSFET is designed for fast switching speeds, making it ideal for digital and analog circuits, including applications like load switching and signal amplification.
Its small size, low threshold voltage, and high-speed switching capabilities make the 2N7002BKW a popular choice in consumer electronics, automotive applications, and portable devices where space and power efficiency are critical.
Equivalent
1. BS170
2. 2N7002
3. BSS138
4. 2N7000
5. MMBF170
These MOSFETs offer similar specifications for switching applications and are often used in low power and small signal applications. Always verify the specific requirements of your application, as parameters like V_DS, I_D, and R_DS(on) may vary slightly between these components.
Features
1. Type: N-channel enhancement mode field-effect transistor (FET).
2. Package: Available in a surface-mount SOT-323 package, which is compact and suitable for space-constrained applications.
3. Voltage: It supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for moderate voltage applications.
4. Current: The device can handle a maximum continuous drain current (I_D) of up to 310mA.
5. R_DS(on): It has a low on-resistance, typically around 1.2Ω, which ensures efficient current flow and reduces power loss.
6. Gate Threshold Voltage: Ranges typically from 1V to 2.5V, allowing for efficient switching with low gate drive.
7. Applications: Commonly used in switching applications, load switching, and as a general-purpose MOSFET in various electronic circuits.
8. Temperature Range: Operates reliably within a wide temperature range, typically from -55°C to +150°C.
These features make the 2N7002BKW a versatile choice for various low to medium power applications in consumer electronics and other industries.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Source (S): This is the terminal through which the current enters the MOSFET. It is typically connected to the ground in many applications.
3. Drain (D): This is the terminal through which the current exits the MOSFET when it is in the 'on' state.
The 2N7002BKW is commonly used for switching applications due to its ability to handle low currents and voltages, making it suitable for driving small loads in digital circuits.
Manufacturer
Application
1. Signal Switching: Useful in switching small signals and digital logic levels due to its fast switching speeds.
2. Load Switching: Ideal for controlling small loads in battery-operated devices due to its low on-resistance.
3. Level Shifting: Employed in level shifting circuits to interface different voltage domains.
4. Amplification: Suitable for small-signal amplification in RF and audio circuits.
5. Battery Management: Often used in battery protection and management circuits for portable electronics.
6. Relay Driving: Acts as a driver for relays and solenoids in various control applications.
These applications benefit from its compact size and efficient electrical characteristics.