仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 320mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.7 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 24.5 pF @ 20 V |
| PowerDissipation(Max) | 350mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
概要
Description
The 2N7002KT1G is a small-signal N-channel MOSFET from ON Semiconductor, designed for low-voltage, low-current applications. Key features include:
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Handling: 115mA continuous drain current (ID).
- Low Threshold Voltage: Typically 1V (VGS(th)), making it suitable for 3V/5V logic circuits.
- Low On-Resistance: ~5Ω (RDS(on)) at VGS = 10V.
- Package: SOT-23 (3-pin), compact for space-constrained designs.
Commonly used in switching, level shifting, and signal amplification in consumer electronics, IoT devices, and low-power systems. Its fast switching and minimal gate drive requirements make it ideal for battery-operated applications.
For detailed specs, refer to the datasheet.
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Handling: 115mA continuous drain current (ID).
- Low Threshold Voltage: Typically 1V (VGS(th)), making it suitable for 3V/5V logic circuits.
- Low On-Resistance: ~5Ω (RDS(on)) at VGS = 10V.
- Package: SOT-23 (3-pin), compact for space-constrained designs.
Commonly used in switching, level shifting, and signal amplification in consumer electronics, IoT devices, and low-power systems. Its fast switching and minimal gate drive requirements make it ideal for battery-operated applications.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the 2N7002KT1G (N-channel MOSFET) include:
- BS170 (similar specs, TO-92 package)
- 2N7000 (higher RDS(on), TO-92)
- DMG1012T (SOT-23, lower current)
- NDS7002A (SOT-23, comparable specs)
- BSS138 (lower voltage, SOT-23)
Check datasheets for exact compatibility in your circuit.
- BS170 (similar specs, TO-92 package)
- 2N7000 (higher RDS(on), TO-92)
- DMG1012T (SOT-23, lower current)
- NDS7002A (SOT-23, comparable specs)
- BSS138 (lower voltage, SOT-23)
Check datasheets for exact compatibility in your circuit.
Features
The 2N7002KT1G is a small-signal N-channel MOSFET with the following key features:
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Rating: 115mA continuous drain current (ID).
- Low Threshold Voltage: Typically 1V (VGS(th)), suitable for low-voltage applications.
- Low On-Resistance: 5Ω max (RDS(on)) at VGS = 10V.
- Fast Switching: Ideal for small load switching and signal amplification.
- Package: SOT-23 (3-pin), compact and surface-mountable.
- Low Power Consumption: Suitable for battery-operated devices.
Common uses include load switching, signal amplification, and logic-level applications.
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Rating: 115mA continuous drain current (ID).
- Low Threshold Voltage: Typically 1V (VGS(th)), suitable for low-voltage applications.
- Low On-Resistance: 5Ω max (RDS(on)) at VGS = 10V.
- Fast Switching: Ideal for small load switching and signal amplification.
- Package: SOT-23 (3-pin), compact and surface-mountable.
- Low Power Consumption: Suitable for battery-operated devices.
Common uses include load switching, signal amplification, and logic-level applications.
Pinout
The 2N7002KT1G is a N-channel MOSFET in a SOT-23 package with 3 pins:
1. Gate (G): Controls the switching (input signal).
2. Drain (D): Connects to the load (output).
3. Source (S): Ground/reference terminal.
Key Features:
- Low threshold voltage (~1V).
- 60V drain-source voltage (VDS).
- Continuous drain current (ID): ~115mA.
- Used for low-power switching (e.g., signal control, load drivers).
Compact and efficient for small-signal applications.
1. Gate (G): Controls the switching (input signal).
2. Drain (D): Connects to the load (output).
3. Source (S): Ground/reference terminal.
Key Features:
- Low threshold voltage (~1V).
- 60V drain-source voltage (VDS).
- Continuous drain current (ID): ~115mA.
- Used for low-power switching (e.g., signal control, load drivers).
Compact and efficient for small-signal applications.
Manufacturer
The 2N7002KT1G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The 2N7002KT1G is a small-signal N-channel MOSFET, commonly used for switching and amplification in low-power applications.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The 2N7002KT1G is a small-signal N-channel MOSFET, commonly used for switching and amplification in low-power applications.
Application
The 2N7002KT1G is a small-signal N-channel MOSFET commonly used in:
- Switching circuits (low-power loads, relays, LEDs)
- Signal amplification (audio, RF stages)
- Logic level conversion (3.3V/5V interfacing)
- Protection circuits (reverse polarity, ESD)
- Portable electronics (battery management, power gating)
Its low threshold voltage (~1V) and compact SOT-23 package make it ideal for space-constrained, low-voltage applications.
- Switching circuits (low-power loads, relays, LEDs)
- Signal amplification (audio, RF stages)
- Logic level conversion (3.3V/5V interfacing)
- Protection circuits (reverse polarity, ESD)
- Portable electronics (battery management, power gating)
Its low threshold voltage (~1V) and compact SOT-23 package make it ideal for space-constrained, low-voltage applications.
