仕様
| 属性 | 値 |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 2 A |
| Voltage - Collector Emitter Breakdown(Max) | 180 V |
| Vce Saturation(Max) @ Ib Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff(Max) | 5µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 100mA, 5V |
| Power - Max | 2 W |
| Frequency - Transition | 200MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
