2SC3356

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2SC3356

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RF TRANS NPN 12V 7GHZ SOT-23-3

  • メーカーEVVO

  • メーカー品番 #2SC3356

  • データシート 2SC3356 DataSheet

  • 在庫状況11354

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仕様

属性 値
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7GHz
Noise Figure (d B Typ @ f) 1.1dB @ 1GHz
Power - Max 200mW
DC Current Gain (h FE) (Min) @ Ic, Vce 50 @ 20mA, 10V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3

概要

Description

The 2SC3356 is an NPN bipolar junction transistor commonly used in radio frequency (RF) applications. It is designed for low noise and high-frequency amplification, making it ideal for use in RF amplifiers, oscillators, and mixing circuits. With a transition frequency (fT) typically around 7 GHz, it is suitable for VHF and UHF applications.
Key specifications include a collector-emitter voltage (Vceo) of 25V, a collector current (Ic) of 100mA, and a power dissipation of about 200mW. The transistor offers a high gain with a low noise figure, crucial for maintaining signal integrity in sensitive electronic equipment.
The 2SC3356 is often packaged in a TO-92, SOT-23, or similar form factor, making it suitable for compact circuit designs. Its reliability and performance make it popular in consumer electronics, communication devices, and other RF-based systems. When designing circuits with the 2SC3356, it's important to consider thermal management and appropriate biasing to ensure optimal performance and longevity.

Equivalent

The 2SC3356 is a high-frequency NPN bipolar junction transistor commonly used in RF applications. Equivalent products include:
- NTE342
- MMBTH10
- BFU790F
- BFU550
- BFS20
- KTC3875
These equivalents have similar electrical characteristics and can often be used as substitutes in various electronic circuits. Always ensure to check the datasheet and specifications to confirm compatibility with your specific application.

Features

The 2SC3356 is a high-frequency NPN bipolar junction transistor commonly used in RF applications. Key features include:
1. High Transition Frequency: Typically around 7 GHz, making it suitable for RF amplification and high-frequency applications.
2. Low Noise Figure: Offers a low noise performance, typically around 1.5 dB, which is beneficial in reducing signal distortion in communications.
3. High Gain: Provides a high gain, which is essential for amplifying weak signals in RF circuits.
4. Collector-Emitter Voltage (Vceo): Maximum of 10V, which indicates its voltage handling capacity.
5. Collector Current (Ic): Maximum of 50mA, suitable for small signal amplification.
6. Package Type: Often available in a SOT-23 package which is compact and suitable for surface mounting on PCBs.
These features make the 2SC3356 ideal for use in applications such as RF amplifiers, oscillators, and other high-frequency circuits.

Pinout

The 2SC3356 is an NPN bipolar junction transistor commonly used in high-frequency applications, particularly in radio frequency (RF) amplifiers. It is packaged in a small, leaded form factor, typically a TO-92 or SOT-89 package, which affects its pin count and layout slightly.
In a TO-92 package, the 2SC3356 has three pins:
1. Emitter (E): This pin is the output side of the transistor, where the current leaves the device.
2. Base (B): This pin is the control terminal that modulates the transistor's operation.
3. Collector (C): This pin is the input side where the current enters the transistor.
In a SOT-89 package, the pin configuration is the same, but the physical arrangement might differ slightly due to the package design.
Functionally, the 2SC3356 is noted for its high gain and low noise characteristics, making it suitable for RF amplification in applications such as RF front ends, oscillators, and mixers in communication devices. Its high transition frequency (f_T) makes it effective in VHF and UHF applications.

Manufacturer

The 2SC3356 is a high-frequency NPN bipolar junction transistor (BJT) originally manufactured by Toshiba. Toshiba is a Japanese multinational conglomerate known for its diverse range of products and services in sectors like electronics, semiconductors, computer hardware, and more. The company has a strong reputation in technology and electronics. Over the years, other semiconductor companies might have also produced equivalents of the 2SC3356, but Toshiba remains a key name associated with its original manufacturing.

Application

The 2SC3356 is an NPN bipolar junction transistor commonly used in radio frequency (RF) applications. Its primary application areas include RF amplification, where it is utilized in low-noise amplifiers (LNAs) within VHF (Very High Frequency) and UHF (Ultra High Frequency) bands. It's also used in RF oscillators and mixers due to its high gain and low noise figure. Additionally, the 2SC3356 is employed in telecommunications equipment and wireless communication systems, such as mobile phones and transceivers, where signal clarity and strength are crucial. Its small signal characteristics make it suitable for a variety of RF circuit designs.

Package

The 2SC3356 is a type of NPN bipolar junction transistor commonly used in high-frequency applications. It is typically housed in a TO-92 or SOT-23 package, with the SOT-23 package being more common for surface-mount applications. These packages are compact and suitable for use in many electronic circuit designs.

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