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AOD2910
+BOMMOSFET N CH 100V 6.5A TO252
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メーカーアルファ・アンド・オメガ・セミコンダクタ株式会社
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メーカー品番 #AOD2910
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データシート AOD2910 DataSheet
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パッケージ TO-252-3
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在庫状況1925
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 6.5A (Ta), 31A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 24mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.7V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1190 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 53.5W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 (DPAK) |
概要
Description
Equivalent
1. IRF7401 from Infineon Technologies.
2. NTD4906N from ON Semiconductor.
3. FDS6679AZ from ON Semiconductor.
4. Si4848DY from Vishay.
Always verify specifications and footprints to ensure compatibility in your specific application.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, which means it conducts when a positive voltage is applied to the gate.
2. Low On-Resistance: It typically offers low on-resistance, enhancing efficiency by reducing power loss during operation.
3. High Current Capability: The AOD2910 can handle significant current loads, making it suitable for high-power applications.
4. Fast Switching: It features fast switching speeds, which are beneficial in applications requiring quick response times.
5. Thermal Performance: Usually designed for good thermal performance, ensuring reliability under various operating conditions.
6. Compact Package: Often available in compact packaging, suitable for space-constrained applications.
Given these features, the AOD2910 is commonly used in power management, motor control, and other applications requiring efficient and reliable electronic switching.