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AOD444
+BOMMOSFET N-CH 60V 4A/12A TO252
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メーカーアルファ・アンド・オメガ・セミコンダクタ株式会社
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メーカー品番 #AOD444
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データシート AOD444 DataSheet
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在庫状況3566
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Ta), 12A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 12A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 540 pF @ 30 V |
| PowerDissipation(Max) | 2.1W (Ta), 20W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252 (DPAK) |
概要
Equivalent
- IRF9Z34N
- FQP27P06
- IRLML6401
- SI2301
- AO3401
These alternatives offer similar specifications (voltage, current, RDS(on)). Always verify compatibility with your circuit requirements.
Features
- Voltage Rating: 40V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.2mΩ (max at VGS=10V)
- Fast Switching: Suitable for high-efficiency applications
- Gate Threshold Voltage (VGS(th)): 1-2.5V
- Power Dissipation: 75W
- Package: TO-252 (DPAK) for easy mounting
- Applications: Power management, DC-DC converters, motor control, and load switching
It offers low conduction losses and high current handling, making it ideal for automotive, industrial, and consumer electronics.
Pinout
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-side).
3. Source (S): Connects to ground (low-side).
Key Features:
- 30V Drain-Source Voltage (VDS)
- 50A Continuous Drain Current (ID)
- Low RDS(on) (e.g., ~4.5mΩ at VGS=10V)
- Logic-Level Gate Drive (VGS ≥ 2.5V)
Applications: Power switching in DC-DC converters, motor control, and load switches.
Package: TO-252 (DPAK) (3-pin surface-mount).
