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AON3414
+BOMMOSFET N-CH 30V 10.5A 8DFN
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メーカーアルファ・アンド・オメガ・セミコンダクタ株式会社
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メーカー品番 #AON3414
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データシート AON3414 DataSheet
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在庫状況26579
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Alpha & Omega Semiconductor Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 10.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 17mOhm @ 9A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 690 pF @ 15 V |
| Power Dissipation (Max) | 3.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (3x3) |
概要
Description
The course could be structured to provide students with essential skills and knowledge that are crucial for further study or professional application in their chosen field. Topics might involve basic theoretical frameworks, practical problem-solving strategies, and the use of relevant software or tools. Additionally, introductory courses often include a mix of lectures, practical exercises, and assessments to ensure a comprehensive understanding of the material.
For precise details, such as the syllabus or specific learning outcomes, you should refer to the course catalog or contact the academic department offering AON3414 at the institution in question.
Equivalent
1. IRLML6344 by Infineon Technologies
2. SI2302 by Vishay
3. NTJS3151P by ON Semiconductor
4. FDN337N by ON Semiconductor
These equivalents are alternatives in terms of similar specifications, such as voltage, current ratings, and package type, but it's essential to verify the exact specifications and suitability for your specific application.
Features
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to around 30V.
2. Current Capacity: It can handle a continuous drain current (I_D) of approximately 14A, making it suitable for moderate power applications.
3. Low On-Resistance: The MOSFET features a low on-state resistance (R_DS(on)), often around 8 mΩ, minimizing power loss and improving efficiency.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is generally between 1V and 3V, allowing operation with low voltage levels.
5. Fast Switching: It is designed for rapid switching, which is beneficial in high-frequency applications.
6. Package Type: The AON3414 is usually housed in a compact DFN or SOIC package, facilitating easy integration into circuit boards.
These features make the AON3414 a versatile choice for power management, DC-DC converters, and other applications requiring efficient electronic switching.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current enters the MOSFET from the load.
3. Source (S): This pin is the exit route for the current flowing through the MOSFET, completing the circuit.
These pins facilitate the control and switching of electrical loads in circuits, leveraging the MOSFET's ability to handle substantial power levels despite its compact size. Always consult the manufacturer's datasheet for precise details and specifications, as variations can exist due to different packaging or revisions.