| 属性 |
値 |
| Supplier |
Microchip Technology |
| Package / Case |
Tube |
| Series |
POWER MOS 7® |
| Part Status |
Obsolete |
| IGBT Type |
Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) |
1200 V |
| Current - Collector(Ic)(Max) |
45 A |
| Current - Collector Pulsed(Icm) |
45 A |
| Vce(on)(Max) @ Vge Ic |
2.1V @ 15V, 15A |
| Power - Max |
195 W |
| Switching Energy |
410µJ (on), 950µJ (off) |
| Input Type |
Standard |
| Gate Charge |
90 nC |
| Td(on / off) @ 25°C |
10ns/150ns |
| Test Condition |
800V, 15A, 4.3Ohm, 15V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
