仕様
| 属性 | 値 |
| Supplier | Microchip Technology |
| Package | Tube |
| Series | POWER MOS 7® |
| ProductStatus | Active |
| IGBTType | PT |
| Voltage-CollectorEmitterBreakdown(Max) | 900 V |
| Current-Collector(Ic)(Max) | 72 A |
| Current-CollectorPulsed(Icm) | 110 A |
| Vce(on)(Max)@VgeIc | 3.9V @ 15V, 25A |
| Power-Max | 417 W |
| SwitchingEnergy | 370µJ (off) |
| InputType | Standard |
| GateCharge | 110 nC |
| Td(on/off)@25°C | 13ns/55ns |
| TestCondition | 600V, 40A, 4.3Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
