仕様
| 属性 | 値 |
| Supplier | Microchip Technology |
| Package / Case | Tube |
| Series | POWER MOS 7® |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown(Max) | 900 V |
| Current - Collector(Ic)(Max) | 72 A |
| Current - Collector Pulsed(Icm) | 110 A |
| Vce(on)(Max) @ Vge Ic | 3.9V @ 15V, 25A |
| Power - Max | 417 W |
| Switching Energy | 370µJ (off) |
| Input Type | Standard |
| Gate Charge | 110 nC |
| Td(on / off) @ 25°C | 13ns/55ns |
| Test Condition | 600V, 40A, 4.3Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
