画像は参考用です
APT30D60BHBG
+BOMDIODE ARRAY GP 600V 27A TO247
-
メーカーマイクロチップ・テクノロジー
-
メーカー品番 #APT30D60BHBG
-
データシート APT30D60BHBG DataSheet
-
在庫状況6685
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| Diode Configuration | 1 Pair Series Connection |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) (per Diode) | 27A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 85 ns |
| Current - Reverse Leakage @ Vr | 250 µA @ 600 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
| Base Product Number | APT30 |
概要
Description
The APT30D60BHBG is a high-performance N-channel power MOSFET designed for various applications, including power management and electronic switching. It features a voltage rating of 600V and a continuous drain current of 30A, making it suitable for high-voltage environments. The device is known for its low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation.
This MOSFET is typically used in applications such as power supplies, motor drives, and industrial equipment where reliability and thermal performance are critical. The APT30D60BHBG is packaged in a TO-220 format, allowing for effective heat dissipation and ease of mounting.
Key specifications include a maximum gate-source voltage (V_GS) rating, fast switching capabilities, and robust thermal characteristics, making it a preferred choice for engineers seeking efficient power solutions. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.
This MOSFET is typically used in applications such as power supplies, motor drives, and industrial equipment where reliability and thermal performance are critical. The APT30D60BHBG is packaged in a TO-220 format, allowing for effective heat dissipation and ease of mounting.
Key specifications include a maximum gate-source voltage (V_GS) rating, fast switching capabilities, and robust thermal characteristics, making it a preferred choice for engineers seeking efficient power solutions. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.
Equivalent
The APT30D60BHBG is a 600V, 30A IGBT. Equivalent products include the Infineon IGBT FZ600R30KE3, the Mitsubishi MGT30J60, and the ON Semiconductor FGA30N60. Always verify specifications such as voltage, current ratings, and package types to ensure compatibility for your specific application.
Features
The APT30D60BHBG is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Capable of handling up to 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Typically supports a drain current of 30A, allowing for robust performance in power management.
3. Low On-Resistance: Offers low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching: Designed for rapid switching, making it ideal for applications in power supplies and converters.
5. Thermal Performance: Features a TO-247 package that enhances heat dissipation, ensuring reliable operation under high load conditions.
6. Integrated Body Diode: Provides inherent reverse conduction capability for applications needing this feature.
These characteristics make the APT30D60BHBG suitable for use in various applications, including motor drives, power converters, and renewable energy systems.
1. Voltage Rating: Capable of handling up to 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Typically supports a drain current of 30A, allowing for robust performance in power management.
3. Low On-Resistance: Offers low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching: Designed for rapid switching, making it ideal for applications in power supplies and converters.
5. Thermal Performance: Features a TO-247 package that enhances heat dissipation, ensuring reliable operation under high load conditions.
6. Integrated Body Diode: Provides inherent reverse conduction capability for applications needing this feature.
These characteristics make the APT30D60BHBG suitable for use in various applications, including motor drives, power converters, and renewable energy systems.
Pinout
The APT30D60BHBG is a N-channel MOSFET designed for high-voltage applications, typically used in power conversion and motor control. It features a total of 8 pins.
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET operation (turns it on/off).
2. Drain (D) - Connects to the load; current flows out from this terminal.
3. Source (S) - Connects to the ground or the lower potential in the circuit.
The remaining pins may include various configurations for current sensing, thermal management, or additional features depending on the specific package and application.
For detailed specifications, always refer to the manufacturer's datasheet.
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET operation (turns it on/off).
2. Drain (D) - Connects to the load; current flows out from this terminal.
3. Source (S) - Connects to the ground or the lower potential in the circuit.
The remaining pins may include various configurations for current sensing, thermal management, or additional features depending on the specific package and application.
For detailed specifications, always refer to the manufacturer's datasheet.
Manufacturer
The APT30D60BHBG is manufactured by Advanced Power Technology (APT), a company that specializes in the design and production of high-performance power semiconductor devices. APT primarily focuses on power MOSFETs, IGBTs, and diodes, catering to various industries such as industrial, automotive, and consumer electronics. The company aims to provide innovative solutions for power management and conversion, contributing to energy efficiency and reliability in electronic applications. APT is known for its commitment to quality, performance, and customer service in the semiconductor market.
Application
The APT30D60BHBG is a high-power, insulated gate bipolar transistor (IGBT) used primarily in various applications such as motor drives, induction heating, and power inverters. Its features make it suitable for industrial automation, renewable energy systems like solar inverters, and electric vehicle powertrains. Additionally, it can be employed in power supplies, welding equipment, and uninterruptible power supplies (UPS). The device's efficiency and robust performance under high voltage and current conditions enhance its usability in both commercial and residential power electronic applications.
Package
The APT30D60BHBG is packaged in a TO-247 format, which is a type of power semiconductor package designed for easy heat dissipation and robust performance in high-power applications.
