仕様
| 属性 | 値 |
| Supplier | Microchip Technology |
| Package | Tube |
| Series | POWER MOS 7® |
| ProductStatus | Active |
| IGBTType | PT |
| Configuration | Single |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
| Current-Collector(Ic)(Max) | 64 A |
| Power-Max | 284 W |
| Vce(on)(Max)@VgeIc | 3.9V @ 15V, 35A |
| Current-CollectorCutoff(Max) | 350 µA |
| InputCapacitance(Cies)@Vce | 3.24 nF @ 25 V |
| Input | Standard |
| NTCThermistor | No |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | ISOTOP |
