仕様
| 属性 | 値 |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Series | POWER MOS V® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain(Id) @ 25°C | 139A |
| Rds On(Max) @ Id Vgs | 10mOhm @ 69.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 2.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 350nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 9875pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
