仕様
| 属性 | 値 |
| Supplier | Microchip Technology |
| Package | Bulk |
| ProductStatus | Active |
| FETType | 4 N-Channel (Half Bridge) |
| FETFeature | Silicon Carbide (SiC) |
| DraintoSourceVoltage(Vdss) | 500V |
| Current-ContinuousDrain(Id)@25°C | 46A |
| RdsOn(Max)@IdVgs | 90mOhm @ 23A, 10V |
| Vgs(th)(Max)@Id | 5V @ 2.5mA |
| GateCharge(Qg)(Max)@Vgs | 123nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 5590pF @ 25V |
| Power-Max | 357W |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | SP4 |
