仕様
| 属性 | 値 |
| Supplier | Microchip Technology |
| Package | Bulk |
| ProductStatus | Active |
| FETType | 4 N-Channel (Three Level Inverter) |
| FETFeature | Silicon Carbide (SiC) |
| DraintoSourceVoltage(Vdss) | 1200V (1.2kV) |
| Current-ContinuousDrain(Id)@25°C | 219A (Tc) |
| RdsOn(Max)@IdVgs | 12mOhm @ 150A, 20V |
| Vgs(th)(Max)@Id | 2.4V @ 30mA (Typ) |
| GateCharge(Qg)(Max)@Vgs | 483nC @ 20V |
| InputCapacitance(Ciss)(Max)@Vds | 8400pF @ 1000V |
| Power-Max | 925W |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | SP6 |
