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AS4C16M16SA-7TCN
+BOMIC DRAM 256MBIT PAR 54TSOP II
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メーカーアライアンスメモリー株式会社
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メーカー品番 #AS4C16M16SA-7TCN
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データシート AS4C16M16SA-7TCN DataSheet
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パッケージ TSOP-54
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在庫状況2874
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 143 MHz |
| Write Cycle Time - Word Page | 14ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
概要
Description
The "-7TCN" denotes specific features like speed grade and packaging type. The device is known for its low power consumption, making it suitable for battery-operated devices. The AS4C16M16SA-7TCN is designed to be compatible with a wide range of electronic systems, providing reliable performance in various environments. It supports standard SDRAM functionalities such as burst mode operation and auto-refresh, which enhance its efficiency and overall performance in managing memory tasks in complex applications.
Equivalent
1. Micron MT48LC16M16A2P-7E: 256Mb SDR SDRAM
2. Samsung K4S281632I-UC75: 256Mb SDR SDRAM
3. Hynix HY57V161610FTP-7: 256Mb SDR SDRAM
4. Winbond W9825G6JH-6: 256Mb SDR SDRAM
These equivalents have similar specifications but ensure to verify compatibility with your specific application requirements.
Manufacturer
Application
1. Consumer Electronics: Used in devices like TVs, cameras, and gaming consoles for efficient memory operations.
2. Networking Equipment: Provides fast data processing capabilities in routers and switches.
3. Industrial Automation: Supports real-time data processing in PLCs and control systems.
4. Automotive Systems: Facilitates rapid data management in infotainment systems and advanced driver-assistance systems (ADAS).
5. Embedded Systems: Ideal for use in IoT devices and other embedded platforms requiring reliable memory performance.
These applications benefit from the DRAM's fast access times and high-density storage capabilities.