AS4C256M16D3LC-12BCN

The AS4C256M16D3LC-12BCN is a 2 Gb (256M x 16) DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) memory chip designed for high-performance applications. It operates at a voltage of 1.5V and features a data rate of 1600 MT/s, adhering to the DDR3 specifications. This memory module is organized in a 16-bit wide configuration, making it suitable for various computing systems, including desktops, laptops, and servers.
Key features include support for various burst lengths (BL8, BL4), low power consumption, and advanced refresh capabilities. The device also supports various operating modes, including random access and burst read/write operations. With its robust performance and reliability, the AS4C256M16D3LC-12BCN is commonly used in applications requiring high-speed data processing and storage. Overall, this DDR3 SDRAM is ideal for enhancing system performance in modern computing environments.

The AS4C256M16D3LC-12BCN chip is a DDR3 SDRAM memory module. Equivalent products include:
- MT41K256M16HA-125
- HMT351U6CFR8C-PB
- K4B4G1646D-BCK0
Ensure compatibility in terms of voltage, timing, and density when selecting substitutes. Always refer to the manufacturer's datasheets for detailed specifications.

The AS4C256M16D3LC-12BCN is a DDR3 SDRAM memory chip with the following key features:
1. Capacity: 256 Megabits (32 Megabytes).
2. Organization: Configured as 16 bits x 16 (x16).
3. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
4. Voltage: Requires a core voltage of 1.5V, with a low-power operation mode.
5. Package Type: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
6. Data Rate: Supports a wide range of applications, providing high bandwidth for enhanced performance.
7. Refresh: Supports both self-refresh and normal refresh modes.
8. Features: Includes features like burst lengths of 8 and 4, with a CAS latency of 12.
9. Compatibility: Compatible with various memory controllers and systems supporting DDR3 technology.
This chip is typically used in consumer electronics, computing devices, and networking equipment.

The AS4C256M16D3LC-12BCN is a 4Gb (512MB) DDR3 SDRAM memory chip with a pin count of 60. It operates with a 16-bit data width and is organized as 256M x 16. The device supports data rates of up to 1600 MT/s and is compliant with JEDEC standards.
Key pin functions include:
- Data Pins (DQ0-DQ15): Used for data input/output.
- Address Pins (A0-A13): Used to select the memory addresses.
- Control Pins:
- CLK: Clock input.
- CS: Chip select.
- WE: Write enable.
- CAS: Column address strobe.
- RAS: Row address strobe.

- Ba (Bank Address): For bank selection.
- VDD/VSS: Power supply and ground.
This chip is designed for use in various applications requiring high-speed memory access.

The AS4C256M16D3LC-12BCN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in the design, manufacturing, and marketing of memory solutions. They focus on providing a wide range of memory products, including DRAM, SRAM, and Flash memory, primarily for various applications in consumer electronics, computing, telecommunications, and automotive sectors.
Founded in 2006 and headquartered in Morgan Hill, California, Alliance Memory positions itself as a provider of high-quality, cost-effective memory solutions that are compatible with existing technologies. Their products are used in a variety of applications where reliable memory performance is critical, and they work to support customers through a combination of competitive pricing, quality assurance, and customer service.

The AS4C256M16D3LC-12BCN is a DDR3 SDRAM memory chip primarily used in various applications including:
1. Consumer Electronics: TVs, gaming consoles, and set-top boxes.
2. Computers: Laptops and desktops for enhanced performance.
3. Networking Equipment: Routers and switches for improved data handling.
4. Industrial Applications: Automation systems and control devices.
5. Telecommunications: Base stations and infrastructure equipment.
Its high-speed data transfer and reliability make it suitable for applications requiring efficient memory solutions.

The AS4C256M16D3LC-12BCN is a DDR3 DRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This type of packaging provides a compact design suitable for high-density applications, ensuring efficient thermal performance and a smaller footprint on printed circuit boards (PCBs).