仕様
| 属性 | 値 |
| Supplier | Alliance Memory, Inc. |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 8Gb (512M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
概要
Description
AS4C512M16D3LB-12BCN is a DDR3 SDRAM device from the AS4C family (Alliance Memory). It is organized as 512M x 16, giving a total capacity of 8 Gbit (about 1 GB) per die. Key points:
- Type: Synchronous DRAM (DDR3) for system memory
- Organization: 512M words x 16-bit data width
- Features: multi-bank operation, burst mode, self-refresh, power-down
- Voltage/Interface: DDR3 memory interface (low-power variants available)
- Applications: embedded systems, consumer electronics, networking, and other digital devices needing DRAM
In short, a high-density, DDR3 RAM die used as main memory in compact electronics.
- Type: Synchronous DRAM (DDR3) for system memory
- Organization: 512M words x 16-bit data width
- Features: multi-bank operation, burst mode, self-refresh, power-down
- Voltage/Interface: DDR3 memory interface (low-power variants available)
- Applications: embedded systems, consumer electronics, networking, and other digital devices needing DRAM
In short, a high-density, DDR3 RAM die used as main memory in compact electronics.
Equivalent
AS4C512M16D3LB-12BCN is a DDR3L SDRAM, 512M×16 (≈1GB) with 1.35V/1.5V. Cross equivalents from major vendors: Micron MT41K512M16JT-125; Samsung K4B4G0846F; SK hynix H5TQ2G63CFR. Check exact timing (CL), speed grade (1333/1600 MT/s) and package when substituting.
Features
Here are typical features for the AS4C512M16D3LB-12BCN DDR3L SDRAM device (510M x16, DDR3L):
- Type/organization: DDR3L SDRAM, 512M x16 (single device)
- Voltage: Low-voltage DDR3L operation (about 1.35V, with standard 1.5V I/O tolerance per DDR3L family)
- Banks: 8 banks, flexible burst operations (burst length 4/8)
- Data bus: x16 I/O width
- Speed/data rate: supports standard DDR3L rates (commonly up to around 1066–1333 MT/s depending on grade)
- Features: auto-refresh and self-refresh, ZQ calibration, on-die termination capabilities, DLL-based timing, multi-bank operation
- Package/grade: Pb-free (BCN code), available in industrial/commercial temperature ranges
- Applications: suitable for system memory in consumer electronics and embedded platforms
Note: exact timing (CAS latency), maximum operating frequency, and temperature range vary by specific lot and supplier. Always consult the official datasheet for precise specs and supported speeds.
- Type/organization: DDR3L SDRAM, 512M x16 (single device)
- Voltage: Low-voltage DDR3L operation (about 1.35V, with standard 1.5V I/O tolerance per DDR3L family)
- Banks: 8 banks, flexible burst operations (burst length 4/8)
- Data bus: x16 I/O width
- Speed/data rate: supports standard DDR3L rates (commonly up to around 1066–1333 MT/s depending on grade)
- Features: auto-refresh and self-refresh, ZQ calibration, on-die termination capabilities, DLL-based timing, multi-bank operation
- Package/grade: Pb-free (BCN code), available in industrial/commercial temperature ranges
- Applications: suitable for system memory in consumer electronics and embedded platforms
Note: exact timing (CAS latency), maximum operating frequency, and temperature range vary by specific lot and supplier. Always consult the official datasheet for precise specs and supported speeds.
Pinout
- Pin count: 48 pins
- Function: Parallel NAND flash memory (512 Mb total, 16-bit wide). Provides standard NAND interface with address lines, 16 data lines (DQ0–DQ15), CLE/ALE/WE/RE/CE/WP, R/B, Vcc/Vccq, and GND for non-volatile storage.
- Function: Parallel NAND flash memory (512 Mb total, 16-bit wide). Provides standard NAND interface with address lines, 16 data lines (DQ0–DQ15), CLE/ALE/WE/RE/CE/WP, R/B, Vcc/Vccq, and GND for non-volatile storage.
Manufacturer
- Manufacturer: Alliance Memory, Inc.
- What kind of company: A semiconductor company that designs and supplies memory integrated circuits (DRAM/SDRAM) for electronics.
- What kind of company: A semiconductor company that designs and supplies memory integrated circuits (DRAM/SDRAM) for electronics.
Application
AS4C512M16D3LB-12BCN is a DDR3L SDRAM (512M x 16) low-voltage memory. Typical application areas:
- Notebook/ultrabook memory (SODIMM) and other mobile/embedded systems
- Embedded systems and industrial PCs
- Networking/telecom equipment (routers, switches)
- Automotive infotainment and in-vehicle displays
- Consumer electronics (set-top boxes, media players, home entertainment devices)
- Small form factor desktops and other compact computing platforms
Note: uses DDR3L at ~1.35V, suitable where low power memory is required.
- Notebook/ultrabook memory (SODIMM) and other mobile/embedded systems
- Embedded systems and industrial PCs
- Networking/telecom equipment (routers, switches)
- Automotive infotainment and in-vehicle displays
- Consumer electronics (set-top boxes, media players, home entertainment devices)
- Small form factor desktops and other compact computing platforms
Note: uses DDR3L at ~1.35V, suitable where low power memory is required.
Package
LBGA — leadless Ball Grid Array package.
