AS4C512M16D4-75BIN

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AS4C512M16D4-75BIN

+BOM

IC DRAM 8GBIT POD 96FBGA

  • メーカーアライアンスメモリー株式会社

  • メーカー品番 #AS4C512M16D4-75BIN

  • 在庫状況9631

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Part Status Obsolete
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 8Gbit
Memory Organization 512M x 16
Memory Interface POD
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature -40°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13)
Base Product Number AS4C512
Clock Frequency 1.333 GHz
Access Time 18 ns

概要

Description

The AS4C512M16D4-75BIN is a DDR4 SDRAM module manufactured by Alliance Memory. It offers a high-speed, high-density memory solution suitable for a range of applications, including computing, networking, and telecommunications. This specific model has a storage capacity of 512Mb, organized as 32M words by 16 bits. It operates at DDR4 speeds, with a clock frequency of up to 2666 MHz, enabling fast data transfer rates. The "-75BIN" denotes specific operational parameters, such as temperature range and other performance characteristics, typically tailored for industrial applications.
The memory module is designed to operate at a low voltage of 1.2V, which helps reduce power consumption and heat dissipation, making it ideal for energy-efficient systems. It features a 288-ball FBGA (Fine-Pitch Ball Grid Array) package, providing a compact form factor while maintaining high reliability and performance. The AS4C512M16D4-75BIN supports various error correction codes (ECC) to ensure data integrity, making it suitable for mission-critical applications that require stable and reliable performance.

Equivalent

The AS4C512M16D4-75BIN is a DDR3 SDRAM memory chip produced by Alliance Memory. Equivalent products would include other DDR3 SDRAM chips with similar specifications from manufacturers like Micron, Samsung, or Hynix, such as the MT41K512M16 from Micron, K4B4G1646D from Samsung, and H5TQ4G63AFR from Hynix. Make sure to compare specific parameters like speed, voltage, and temperature range to ensure full compatibility.

Features

The AS4C512M16D4-75BIN is a DDR4 SDRAM memory component with the following features:
1. Density and Configuration: It has a density of 8Gb (gigabit) with a configuration of 512Mb x 16.
2. Speed and Timing: Operates at a data rate of DDR4-2400, with a cycle time of 0.833ns. The "75" in its part number often indicates CL=17-17-17 latency timings.
3. Voltage: Functions at a standard voltage of 1.2V, typical for DDR4 technology, which enhances power efficiency.
4. Package: Offered in a 96-ball FBGA package, ensuring compact and effective thermal performance.
5. Temperature Range: The "BIN" suffix indicates an industrial temperature range, typically -40°C to 85°C, making it suitable for various demanding applications.
6. Error Correction: Supports ECC (Error-Correcting Code), essential for applications requiring high data reliability.
7. Bank Architecture: Features a bank architecture of 16 banks, organized in 4 bank groups.
These features make the AS4C512M16D4-75BIN suitable for use in high-performance computing, networking, and industrial applications.

Pinout

The AS4C512M16D4-75BIN is a DRAM chip with a 78-ball BGA (Ball Grid Array) package. It features 512 Megabits organized as 32M x 16, offering high-speed data storage and retrieval. This chip typically serves in applications such as computing and communication devices.
Key functions include:
- Data storage and management: Provides a temporary storage area for data being processed by a computing device.
- High-speed performance: Designed to operate efficiently at high speeds, suitable for systems requiring quick data access and processing.
- Low power consumption: Optimized for minimal power usage, aiding in the efficiency of portable and battery-operated devices.
Overall, the AS4C512M16D4-75BIN is used in environments where reliable, high-speed memory is critical.

Manufacturer

The AS4C512M16D4-75BIN is manufactured by Alliance Memory, Inc. Alliance Memory is a company that specializes in providing legacy memory products, including SRAM, DRAM, and SDRAM, which are used in a variety of applications. Their focus is on supporting older memory technologies that continue to be used in industrial, communications, automotive, and consumer electronics sectors, among others. By supplying these legacy memory solutions, Alliance Memory fills a niche market need for products that are no longer produced by larger semiconductor companies.

Application

The AS4C512M16D4-75BIN is a high-speed DRAM module, typically used in applications requiring fast, reliable memory. Common application areas include:
1. Networking Equipment: Enhances performance in routers and switches.
2. Telecommunications: Supports infrastructure like base stations.
3. Embedded Systems: Powers industrial and consumer electronics.
4. Automotive Systems: Used in infotainment and advanced driver-assistance systems (ADAS).
5. Medical Devices: Supports high-speed data processing for diagnostics.
6. Gaming: Powers consoles and gaming hardware for fast data access.
7. Consumer Electronics: Found in devices like smart TVs and set-top boxes.
Its versatility and performance make it suitable for a wide range of high-demand applications.

Package

The AS4C512M16D4-75BIN is a DRAM chip that typically comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. This type of packaging is known for its compact form factor and efficient thermal performance, making it suitable for high-density memory applications.

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