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AT25DF321A-MH-T
+BOMIC FLASH 32MBIT SPI 100MHZ 8UDFN
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メーカールネサスエレクトロニクス
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メーカー品番 #AT25DF321A-MH-T
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在庫状況5451
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Not For New Designs |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH |
| Memory Size | 32Mbit |
| Memory Organization | 256 Bytes x 16384 pages |
| Memory Interface | SPI |
| Write Cycle Time - Word, Page | 7µs, 3ms |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 8-UDFN Exposed Pad |
| Supplier Device Package | 8-UDFN (5x6) |
| Base Product Number | AT25DF321 |
| Clock Frequency | 100 MHz |
概要
Description
Key features include a wide voltage supply range (2.3V to 3.6V), fast read access time, and low power standby and deep power-down modes, making it ideal for battery-operated applications. It also supports advanced security features such as a software write protection mechanism and hardware-controlled lock-down.
The AT25DF321A-MH-T is packaged in a compact 8-lead SOIC, making it suitable for space-constrained applications. Its robust design ensures data retention and endurance, meeting the high demands of embedded systems, consumer electronics, and industrial applications.
Equivalent
1. Winbond W25Q32JV - 32M-bit serial flash memory.
2. Micron M25P32 - 32M-bit serial flash memory.
3. ISSI IS25LP032 - 32M-bit serial flash memory.
4. Macronix MX25L3206E - 32M-bit serial flash memory.
These alternatives offer similar storage capacity and interface, often used in embedded systems for similar applications.
Features
1. Memory Organization: It offers 32 Mbits of storage, organized in 4,194,304 bytes.
2. Interface: Utilizes a Serial Peripheral Interface (SPI) for communication, supporting standard SPI, dual, and quad I/O.
3. Performance: Offers fast read speeds with a maximum clock frequency of up to 104 MHz.
4. Erase Options: Includes sector (4KB), block (32KB and 64KB), and chip erase functionalities.
5. Endurance: Guarantees a minimum of 100,000 erase/write cycles per sector.
6. Data Retention: Ensures data retention for a minimum of 20 years.
7. Power Supply: Operates at a low power supply voltage range of 2.3V to 3.6V.
8. Package: Available in an 8-lead SOIC package.
9. Security: Features unique device ID and hardware/software write protection.
10. Temperature Range: Suitable for industrial temperature ranges from -40°C to +85°C.
These features make it suitable for applications that require reliable, high-speed data storage, such as in embedded systems and consumer electronics.
Pinout
1. CS (Chip Select): Activates the device when low.
2. SCK (Serial Clock): Provides the timing for data transfer.
3. SI (Serial Input): Inputs data to the device.
4. SO (Serial Output): Outputs data from the device.
5. WP (Write Protect): Protects certain sections of memory from being modified.
6. VCC (Power Supply): Powers the device, typically 2.3V to 3.6V.
7. GND (Ground): Ground reference for power supply.
8. HOLD: Pauses the serial communication without resetting the device.
These pins facilitate the operation and control of the memory device through SPI (Serial Peripheral Interface), supporting various commands for reading, writing, and erasing data.
Manufacturer
Dialog Semiconductor, the parent company, specializes in developing power management, audio, charging, Bluetooth low energy (BLE), and Industrial IoT technologies. Renesas Electronics, a larger global semiconductor company, provides a wide range of microcontrollers, analog, power, and SoC products. This combination of companies represents a comprehensive portfolio aimed at addressing a variety of embedded system needs, highlighting a focus on innovative, energy-efficient, and reliable solutions for various markets.