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AUIRFR4615
+BOMMOSFET N-CH 150V 33A DPAK
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #AUIRFR4615
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データシート AUIRFR4615 DataSheet
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パッケージ TO-252-3
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在庫状況5584
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 33A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 42mOhm @ 21A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 26 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1750 pF @ 50 V |
| Power Dissipation (Max) | 144W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-PAK (TO-252AA) |
概要
Description
- Low on-resistance (RDS(on)): 24mΩ (max) at 10V, reducing conduction losses.
- Fast switching: Optimized for high-frequency applications like DC-DC converters, motor drives, and power supplies.
- Robust design: Avalanche-rated, with a compact D2PAK (TO-263) package for efficient thermal performance.
- Logic-level gate drive: Compatible with 4.5V–10V gate signals, simplifying control circuit design.
Ideal for automotive, industrial, and consumer electronics, it balances performance, reliability, and cost. Always refer to the datasheet for detailed specs and application guidelines.
Equivalent
- IRFR4615 (same specs, different manufacturer)
- IRF3710 (similar specs, 100V, 57A)
- IRF3205 (55V, 110A)
- STP80NF55-06 (55V, 80A)
- FDP8878 (30V, 120A)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 150V drain-to-source voltage (VDSS).
- Current Handling: Up to 104A continuous drain current (ID) at 25°C.
- Low On-Resistance: 4.5mΩ (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-frequency applications.
- Robust Design: Avalanche energy rated, improving reliability in harsh conditions.
- Package: TO-220AB, suitable for easy mounting and heat dissipation.
- Gate Charge: Low total gate charge (Qg) for efficient drive control.
Ideal for power supplies, motor drives, and DC-DC converters.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- N-channel MOSFET
- 150V drain-source voltage (VDS)
- 60A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power handling
Commonly used in motor control, power supplies, and DC-DC converters.
Application
1. Automotive Systems – Engine control, lighting, and power distribution.
2. DC-DC Converters – Efficient voltage conversion in power supplies.
3. Motor Control – Driving brushed/brushless motors in industrial and automotive applications.
4. Power Management – Load switching and battery protection circuits.
5. Industrial Applications – High-current switching in automation and robotics.
Its low on-resistance (RDS(on)) and high current handling (up to 60A) make it ideal for high-efficiency, high-power applications.
