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BAW56-7-F
+BOMDIODE ARRAY GP 75V 300MA SOT23-3
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メーカーアナログ・デバイセズ
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メーカー品番 #BAW56-7-F
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在庫状況8989
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Anode |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Current - Average Rectified (Io) (per Diode) | 300mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Current - Reverse Leakage @ Vr | 2.5 µA @ 75 V |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Base Product Number | BAW56 |
概要
Description
The BAW56-7-F is a precision, low-noise, N-channel MOSFET designed for high-frequency applications. It features a low on-resistance, making it suitable for efficient switching in various electronic circuits. This component is typically used in power management systems, RF amplifiers, and signal processing applications, where minimal signal distortion and high reliability are crucial.
Key specifications include a maximum drain-source voltage (V_DS) of around 60V, a continuous drain current (I_D) rating up to 6A, and a fast switching speed, which enhances its performance in dynamic applications. The BAW56-7-F also offers low gate threshold voltage, enabling efficient operation in low-voltage environments.
Available in a compact package, it is suitable for space-constrained designs. Its robust thermal characteristics ensure stable performance under varying conditions. Overall, the BAW56-7-F is a versatile choice for engineers seeking reliable and efficient MOSFET solutions in their designs.
Key specifications include a maximum drain-source voltage (V_DS) of around 60V, a continuous drain current (I_D) rating up to 6A, and a fast switching speed, which enhances its performance in dynamic applications. The BAW56-7-F also offers low gate threshold voltage, enabling efficient operation in low-voltage environments.
Available in a compact package, it is suitable for space-constrained designs. Its robust thermal characteristics ensure stable performance under varying conditions. Overall, the BAW56-7-F is a versatile choice for engineers seeking reliable and efficient MOSFET solutions in their designs.
Equivalent
The BAW56-7-F is a Schottky diode used for switching applications. Equivalent products include BAT54, BAT54A, and BAT54B diodes, which also feature low forward voltage and fast switching. Other alternatives may include BAW56, MBR1100, and 1N5817, depending on specific voltage and current ratings. Always verify electrical parameters for compatibility in your application.
Features
The BAW56-7-F is a Schottky barrier diode designed for high-speed switching applications. Key features include:
1. Low Forward Voltage Drop: Typically around 0.3V at 1A, which reduces power loss and improves efficiency.
2. High Switching Speed: Suitable for high-frequency applications due to its fast response time.
3. Reverse Voltage Rating: It has a maximum reverse voltage (V_R) of around 45V, making it suitable for various low to medium voltage applications.
4. Forward Current Rating: Can handle continuous forward current up to 1A, allowing for versatile usage in various circuits.
5. Compact Package: Available in a SMD package (SOT-23), which is ideal for space-constrained applications.
6. Low Leakage Current: Ensures minimal power loss during operation, enhancing overall circuit efficiency.
These features make the BAW56-7-F ideal for use in power supply circuits, rectifiers, and signal demodulation applications.
1. Low Forward Voltage Drop: Typically around 0.3V at 1A, which reduces power loss and improves efficiency.
2. High Switching Speed: Suitable for high-frequency applications due to its fast response time.
3. Reverse Voltage Rating: It has a maximum reverse voltage (V_R) of around 45V, making it suitable for various low to medium voltage applications.
4. Forward Current Rating: Can handle continuous forward current up to 1A, allowing for versatile usage in various circuits.
5. Compact Package: Available in a SMD package (SOT-23), which is ideal for space-constrained applications.
6. Low Leakage Current: Ensures minimal power loss during operation, enhancing overall circuit efficiency.
These features make the BAW56-7-F ideal for use in power supply circuits, rectifiers, and signal demodulation applications.
Pinout
The BAW56-7-F is a dual general-purpose Schottky diode in a SOT-23 package. It has a pin count of 3.
Pin Function:
1. Pin 1 (Anode of D1) - Connects to the anode terminal of the first Schottky diode (D1).
2. Pin 2 (Common Cathode) - This is the common cathode for both diodes (D1 and D2).
3. Pin 3 (Anode of D2) - Connects to the anode terminal of the second Schottky diode (D2).
These diodes are commonly used for various applications, including rectification, signal detection, and clamping due to their low forward voltage drop and fast switching speed.
Pin Function:
1. Pin 1 (Anode of D1) - Connects to the anode terminal of the first Schottky diode (D1).
2. Pin 2 (Common Cathode) - This is the common cathode for both diodes (D1 and D2).
3. Pin 3 (Anode of D2) - Connects to the anode terminal of the second Schottky diode (D2).
These diodes are commonly used for various applications, including rectification, signal detection, and clamping due to their low forward voltage drop and fast switching speed.
Manufacturer
The BAW56-7-F is manufactured by Nexperia, a company that specializes in semiconductor products. Nexperia focuses on the production of discrete, logic, and MOSFET components, offering a wide range of products for various electronic applications. The company was spun off from NXP Semiconductors in 2017 and has since established itself as a leading provider in the semiconductor industry. Nexperia is known for its commitment to quality, reliability, and efficiency in manufacturing, and it serves a diverse range of sectors, including automotive, industrial, and consumer electronics.
Application
The BAW56-7-F is a Schottky barrier diode commonly used in various applications including:
1. Rectification: In power supplies for efficient voltage conversion.
2. Clamping: To protect circuits from voltage spikes.
3. Switching: In high-speed applications due to low forward voltage drop.
4. Signal Demodulation: In RF applications for demodulating signals.
5. Mixers: In communication devices for frequency conversion.
Its fast switching capabilities and low leakage current make it suitable for these areas, particularly in consumer electronics and telecommunications.
1. Rectification: In power supplies for efficient voltage conversion.
2. Clamping: To protect circuits from voltage spikes.
3. Switching: In high-speed applications due to low forward voltage drop.
4. Signal Demodulation: In RF applications for demodulating signals.
5. Mixers: In communication devices for frequency conversion.
Its fast switching capabilities and low leakage current make it suitable for these areas, particularly in consumer electronics and telecommunications.
Package
The BAW56-7-F is packaged in a SMD (Surface Mount Device) format, specifically a small SOT-23 package. This allows for efficient mounting on circuit boards while minimizing space.
