BD135

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BD135

+BOM

TRANS NPN 45V 1.5A TO126

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仕様

属性
Supplier onsemi,Rochester Electronics, LLC
Package / Case Bulk,Bulk
Part Status Obsolete
Transistor Type NPN
Current - Collector(Ic)(Max) 1.5 A
Voltage - Collector Emitter Breakdown(Max) 45 V
Vce Saturation(Max) @ Ib Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff(Max) 100nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 40 @ 150mA, 2V
Power - Max 1.25 W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole

概要

Description

The BD135 is a silicon NPN bipolar junction transistor (BJT) commonly used in electronic circuits for switching and amplification purposes. It is well-suited for medium power applications, offering a good balance of performance and cost-effectiveness. The BD135 features a collector-emitter voltage rating of 45V and a continuous collector current of up to 1.5A. It is often found in audio amplifiers, signal processing circuits, and various other electronic devices requiring reliable switching or amplification of signals.
Housed in a TO-126 package, the BD135 provides efficient thermal management, important for maintaining performance and longevity under load. It has a transition frequency of around 190 MHz, making it capable of handling relatively high-speed operations. Due to its robust design, it is a popular choice among hobbyists and professionals for use in DIY projects and commercial electronics alike. The BD135 can be paired with complementary transistors like the BD136 (PNP) for push-pull amplifier configurations, enhancing its versatility in circuit design.

Equivalent

The BD135 is an NPN bipolar junction transistor (BJT) used for general-purpose amplification and switching. Equivalent products include the BD137, BD139, and 2N3055. When selecting an equivalent, ensure the substitute meets the required specifications for current, voltage, and power dissipation for your application. These equivalents can vary slightly in terms of maximum ratings, so always verify the application requirements before substituting.

Features

The BD135 is an NPN bipolar junction transistor (BJT) commonly used in electronic circuits for amplification and switching applications. Here are some of its key features:
1. Polarity: NPN
2. Collector-Emitter Voltage (Vce): 45V
3. Collector-Base Voltage (Vcb): 45V
4. Emitter-Base Voltage (Veb): 5V
5. Collector Current (Ic): 1.5A
6. Power Dissipation (Ptot): 12.5W
7. DC Current Gain (hFE): 40 to 250
8. Package Type: TO-126
9. Transition Frequency (fT): Typically around 190 MHz
The BD135 transistor is suitable for use in audio amplifiers, signal amplifiers, and various switching applications due to its adequate current and voltage ratings. Its TO-126 package allows for efficient heat dissipation, making it suitable for moderate power applications. The transistor's gain and frequency response make it versatile for many electronic projects.

Pinout

The BD135 is an NPN bipolar junction transistor commonly used for amplification and switching applications. It has a TO-126 package and features three pins:
1. Collector (C): This is the terminal where the majority of current enters the transistor. It is connected to the load in a circuit.

2. Base (B): This terminal controls the transistor's operation. A small current or voltage applied at the base can control a larger current flow between the collector and emitter.

3. Emitter (E): This terminal is where the current exits the transistor. In an NPN transistor like the BD135, the emitter is usually connected to the ground in a common-emitter configuration.
These pins allow the BD135 to function effectively in a variety of electronic circuits, handling a maximum collector current of 1.5A and a collector-emitter voltage of up to 45V. It is suitable for medium power applications.

Manufacturer

The BD135 is a NPN bipolar junction transistor that has been manufactured by several semiconductor companies, including STMicroelectronics and Nexperia. These companies are prominent players in the semiconductor industry.
STMicroelectronics is a multinational corporation headquartered in Geneva, Switzerland. It is one of the largest semiconductor companies in the world and provides a wide range of electronic and semiconductor solutions, including transistors, microcontrollers, and sensors, catering to various sectors such as automotive, industrial, personal electronics, and more.
Nexperia, on the other hand, is a global semiconductor company headquartered in Nijmegen, Netherlands. It specializes in discrete, logic, and MOSFET devices, focusing on efficient power semiconductor technology. The company was formerly part of NXP Semiconductors and became an independent entity in 2017. Nexperia provides components designed to meet the demands of the automotive, consumer electronics, and computing markets, among others.
Both companies are integral parts of the global electronics supply chain, supplying essential components that power numerous electronic devices and systems worldwide.

Application

The BD135 is an NPN bipolar junction transistor commonly used in various applications. It is suited for audio amplification, signal amplification, and general-purpose switching. Its capability to handle moderate power levels allows it to be used in small to medium power amplifiers. The BD135 is also used in motor control circuits and relay drivers due to its capacity to handle relatively high currents. Additionally, it is found in power management systems, voltage regulation circuits, and electronic hobby projects, where reliable performance and efficiency are needed. Its robust design makes it suitable for educational purposes and experimental setups.

Package

The BD135 transistor is typically housed in a TO-126 package.