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BSS127H6327XTSA2
+BOMMOSFET N-CH 600V 21MA SOT23-3
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #BSS127H6327XTSA2
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データシート BSS127H6327XTSA2 DataSheet
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在庫状況7409
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | SIPMOS® |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 21mA (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 500Ohm @ 16mA, 10V |
| Vgs(th)(Max)@Id | 2.6V @ 8µA |
| GateCharge(Qg)(Max)@Vgs | 1 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 28 pF @ 25 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-SOT23 |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
| BaseProductNumber | BSS127 |
概要
Description
The BSS127 is commonly used in switching applications, such as power management, signal amplification, and motor control. Its small package size makes it suitable for compact designs in consumer electronics, automotive, and industrial applications.
Additionally, it offers good thermal stability and fast switching capabilities, making it an ideal choice for designs requiring efficient power handling and minimal heat generation. Overall, the BSS127H6327XTSA2 is a versatile and reliable MOSFET that meets the needs of modern electronic devices.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 200mA, allowing it to manage moderate loads effectively.
3. R_DS(on): It boasts a low on-resistance, typically around 0.5 ohms, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges between 1V to 3V, facilitating low-voltage drive applications.
5. Package Type: It comes in a compact SOT-23 package, making it suitable for space-constrained designs.
6. Fast Switching: Designed for fast switching applications, it offers high efficiency in power management circuits.
Ideal for use in power management, battery-powered devices, and signal switching applications, the BSS127H6327XTSA2 is a versatile choice for electronic designs.
Pinout
The pin configuration typically includes:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The terminal through which current flows out to the load.
3. Source (S) - The terminal through which current flows into the MOSFET.
4. Drain (D) - Another drain connection for dual-die applications.
5. Source (S) - Another source connection.
6. Gate (G) - Another gate connection for dual-die applications.
7. Unused Pins - May be unconnected or used for thermal dissipation.
Always consult the specific datasheet for detailed pinout and electrical characteristics.
Manufacturer
NXP Semiconductors was formed in 2006 as a spin-off from Philips, and it has since established itself as a key player in the semiconductor industry, particularly in areas involving secure connectivity and smart applications. With a strong emphasis on innovation, NXP develops solutions that address the growing demand for smart and connected devices across numerous markets. The BSS127H6327XTSA2, specifically, is a MOSFET (metal-oxide-semiconductor field-effect transistor), widely used in various electronic applications for switching and amplification purposes.