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BSS138P,215
+BOMMOSFET N-CH 60V 360MA TO236AB
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メーカーネクスペリアUSA株式会社
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メーカー品番 #BSS138P,215
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データシート BSS138P,215 DataSheet
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在庫状況29065
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Nexperia USA Inc. |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 360mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.6Ohm @ 300mA, 10V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.8 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 50 pF @ 10 V |
| PowerDissipation(Max) | 350mW (Ta), 1.14W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TA) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-236AB |
概要
Description
The BSS138P is a N-channel MOSFET transistor commonly used in electronic circuits for switching and amplification purposes. It is part of the BSS138 series, housed in a compact SOT-23 package, making it suitable for surface-mount applications. The transistor operates with a low gate threshold voltage, allowing it to be driven by low-voltage logic levels, which is ideal for interfacing with microcontrollers and other digital circuits.
The BSS138P can handle a maximum drain-source voltage of 50V and a continuous drain current of up to 220mA. This makes it suitable for various low-power applications such as load switching, DC-DC converters, and level shifting. Its fast switching speed, low on-resistance, and low gate charge contribute to its efficiency in power management tasks.
The "215" likely refers to a specific batch or production code associated with the BSS138P, which manufacturers use for inventory and quality control. Overall, the BSS138P is valued for its reliability, efficiency, and small footprint in electronic design projects.
The BSS138P can handle a maximum drain-source voltage of 50V and a continuous drain current of up to 220mA. This makes it suitable for various low-power applications such as load switching, DC-DC converters, and level shifting. Its fast switching speed, low on-resistance, and low gate charge contribute to its efficiency in power management tasks.
The "215" likely refers to a specific batch or production code associated with the BSS138P, which manufacturers use for inventory and quality control. Overall, the BSS138P is valued for its reliability, efficiency, and small footprint in electronic design projects.
Equivalent
The BSS138P,215 is a N-channel MOSFET commonly used in switching applications. Equivalent products include:
1. 2N7002 - General-purpose N-channel MOSFET.
2. IRLML2502 - Logic level N-channel MOSFET.
3. BSS138 - Similar characteristics with slight variations in packaging or specifications.
4. DMN2075U - N-channel MOSFET with comparable voltage and current ratings.
Check datasheets for exact specifications to ensure compatibility.
1. 2N7002 - General-purpose N-channel MOSFET.
2. IRLML2502 - Logic level N-channel MOSFET.
3. BSS138 - Similar characteristics with slight variations in packaging or specifications.
4. DMN2075U - N-channel MOSFET with comparable voltage and current ratings.
Check datasheets for exact specifications to ensure compatibility.
Features
The BSS138P is a N-channel MOSFET transistor commonly used in electronic applications. Here are some concise features of the BSS138P:
1. N-Channel MOSFET: Allows current to flow when the gate-to-source voltage is positive.
2. Low On-Resistance: Typically around 3.5Ω, which enhances efficiency by reducing power loss.
3. V_DS (Drain-Source Voltage): Maximum rating of 50V, suitable for moderate voltage applications.
4. I_D (Continuous Drain Current): Capable of handling up to 200mA, making it suitable for low power applications.
5. Threshold Voltage: Typically around 0.8V to 1.5V, allowing it to be driven by 3.3V and 5V logic levels.
6. SOT-23 Package: A small form factor suitable for space-constrained PCBs.
7. Fast Switching: Enables efficient performance in high-speed applications.
8. ESD Protection: Built-in protection against electrostatic discharge improves reliability.
These features make the BSS138P suitable for use in applications like signal switching, level shifting, and small load driving in consumer electronics.
1. N-Channel MOSFET: Allows current to flow when the gate-to-source voltage is positive.
2. Low On-Resistance: Typically around 3.5Ω, which enhances efficiency by reducing power loss.
3. V_DS (Drain-Source Voltage): Maximum rating of 50V, suitable for moderate voltage applications.
4. I_D (Continuous Drain Current): Capable of handling up to 200mA, making it suitable for low power applications.
5. Threshold Voltage: Typically around 0.8V to 1.5V, allowing it to be driven by 3.3V and 5V logic levels.
6. SOT-23 Package: A small form factor suitable for space-constrained PCBs.
7. Fast Switching: Enables efficient performance in high-speed applications.
8. ESD Protection: Built-in protection against electrostatic discharge improves reliability.
These features make the BSS138P suitable for use in applications like signal switching, level shifting, and small load driving in consumer electronics.
Pinout
The BSS138P,215 is a small N-channel MOSFET commonly used in low-voltage switching applications. It typically comes in a SOT-23 package. The device has three pins, which are:
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S): This is the terminal through which current enters the MOSFET. For an N-channel MOSFET like the BSS138P, the source is usually connected to a lower voltage.
3. Drain (D): This is the terminal through which current exits the MOSFET. The drain is usually connected to a higher voltage compared to the source.
The BSS138P is designed for low-voltage applications and has a low on-resistance, which makes it efficient for switching tasks in battery-powered and portable devices. It is particularly valued in scenarios where space is at a premium due to its small SOT-23 package.
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S): This is the terminal through which current enters the MOSFET. For an N-channel MOSFET like the BSS138P, the source is usually connected to a lower voltage.
3. Drain (D): This is the terminal through which current exits the MOSFET. The drain is usually connected to a higher voltage compared to the source.
The BSS138P is designed for low-voltage applications and has a low on-resistance, which makes it efficient for switching tasks in battery-powered and portable devices. It is particularly valued in scenarios where space is at a premium due to its small SOT-23 package.
Manufacturer
The BSS138P,215 is manufactured by Nexperia. Nexperia is a global semiconductor company that specializes in the production of discrete and power devices, as well as analog and logic integrated circuits. Originally part of NXP Semiconductors, Nexperia was spun off as an independent entity in 2017. The company is known for its high-volume production capabilities and focuses on delivering efficient and reliable products for the automotive, industrial, computing, consumer, and wearable markets.
Application
The BSS138P,215 is a N-channel MOSFET widely used in various applications due to its compact size and efficient performance. Key application areas include:
1. Switching Circuits: Used in power management for switching applications due to low on-resistance.
2. Level Shifting: Facilitates voltage level conversion in digital circuits.
3. Load Switching: Ideal for controlling power to different loads in portable devices.
4. Signal Processing: Utilized in amplifiers and other analog signal processing circuits.
5. Consumer Electronics: Common in smartphones, tablets, and other portable electronics for efficient power control.
These applications leverage the MOSFET's ability to handle low power and high-speed switching efficiently.
1. Switching Circuits: Used in power management for switching applications due to low on-resistance.
2. Level Shifting: Facilitates voltage level conversion in digital circuits.
3. Load Switching: Ideal for controlling power to different loads in portable devices.
4. Signal Processing: Utilized in amplifiers and other analog signal processing circuits.
5. Consumer Electronics: Common in smartphones, tablets, and other portable electronics for efficient power control.
These applications leverage the MOSFET's ability to handle low power and high-speed switching efficiently.
Package
The BSS138P,215 is a MOSFET transistor that typically comes in a SOT-23 package.
