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BSZ097N10NS5
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #BSZ097N10NS5
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データシート BSZ097N10NS5 DataSheet
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在庫状況9905
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 5000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Type | SMD/SMT |
| Package / Case | TSDSON-8 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 69 A |
| Rds On | 13 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3.8 V |
| Qg - Gate Charge | 22 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 69 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 5 ns |
| Height | 1.1 mm |
| Length | 3.3 mm |
| Rise Time | 5 ns |
| Series | OptiMOS 5 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 21 ns |
| Typical Turn - On Delay Time | 11 ns |
| Width | 3.3 mm |
| Part # Aliases | SP001132550 BSZ097N10NS5ATMA1 |
| Unit Weight | 0.003966 oz |
| Forward Transconductance - Min | 23 S |
概要
Description
BSZ097N10NS5 is a high-performance N-channel MOSFET designed for various power applications. It features a low on-resistance, which enhances efficiency and reduces heat generation during operation. This component is typically used in power management systems, including DC-DC converters, motor drivers, and other switching applications where efficient energy conversion is critical.
With a voltage rating of 100V and a continuous drain current of up to 97A, the BSZ097N10NS5 is suitable for handling substantial loads. Its fast switching capabilities allow for improved performance in high-frequency applications. Moreover, the device is housed in a robust package, providing excellent thermal performance.
Overall, the BSZ097N10NS5 is an ideal choice for engineers looking to optimize power efficiency and manage thermal performance in their designs.
With a voltage rating of 100V and a continuous drain current of up to 97A, the BSZ097N10NS5 is suitable for handling substantial loads. Its fast switching capabilities allow for improved performance in high-frequency applications. Moreover, the device is housed in a robust package, providing excellent thermal performance.
Overall, the BSZ097N10NS5 is an ideal choice for engineers looking to optimize power efficiency and manage thermal performance in their designs.
Equivalent
The BSZ097N10NS5 is an N-channel MOSFET. Equivalent products include the IRF540, STP75NF75, and FQP50N10. These alternatives are similar in voltage and current ratings but always verify specific parameters like RDS(on), VGS(th), and thermal characteristics for compatibility in your application.
Features
The BSZ097N10NS5 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V.
2. Continuous Drain Current: Can handle a maximum continuous current of 97A at a temperature of 25°C.
3. R_DS(on): Low on-resistance of about 10 mΩ, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): Varies typically between 2V to 4V, suitable for low-voltage drive applications.
5. Fast Switching Speed: Facilitates rapid switching in high-frequency applications, improving performance in power conversion.
6. Package Type: Available in DPAK or similar packages, allowing for efficient thermal management and PCB space savings.
7. Applications: Ideal for use in DC-DC converters, motor drives, and power management systems.
These attributes make the BSZ097N10NS5 a versatile choice for various electronic applications requiring effective power control.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V.
2. Continuous Drain Current: Can handle a maximum continuous current of 97A at a temperature of 25°C.
3. R_DS(on): Low on-resistance of about 10 mΩ, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): Varies typically between 2V to 4V, suitable for low-voltage drive applications.
5. Fast Switching Speed: Facilitates rapid switching in high-frequency applications, improving performance in power conversion.
6. Package Type: Available in DPAK or similar packages, allowing for efficient thermal management and PCB space savings.
7. Applications: Ideal for use in DC-DC converters, motor drives, and power management systems.
These attributes make the BSZ097N10NS5 a versatile choice for various electronic applications requiring effective power control.
Pinout
The BSZ097N10NS5 is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load is connected. The current flows out of this pin when the MOSFET is on.
3. Source (S): This pin is connected to ground (in most applications) and serves as the reference point for the drain current.
4. Body Diode (internal, not a separate pin): It allows current to flow in the reverse direction when the MOSFET is off.
The BSZ097N10NS5 is designed for high-efficiency switching applications and can handle high currents and voltages, making it suitable for various power management tasks.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load is connected. The current flows out of this pin when the MOSFET is on.
3. Source (S): This pin is connected to ground (in most applications) and serves as the reference point for the drain current.
4. Body Diode (internal, not a separate pin): It allows current to flow in the reverse direction when the MOSFET is off.
The BSZ097N10NS5 is designed for high-efficiency switching applications and can handle high currents and voltages, making it suitable for various power management tasks.
Manufacturer
The BSZ097N10NS5 is manufactured by Nexperia, a global semiconductor company known for its production of discrete, logic, and MOSFET components. Nexperia specializes in delivering high-quality semiconductor solutions and is recognized for its expertise in the development and manufacturing of various electronic components, including power MOSFETs, diodes, and analog devices. The company focuses on providing reliable and efficient products for a wide range of applications, from automotive and industrial to consumer electronics. Established as a spin-off from NXP Semiconductors in 2017, Nexperia has a strong emphasis on innovation, quality, and efficiency, serving customers worldwide with a commitment to meeting the growing demands of the semiconductor market.
Application
The BSZ097N10NS5 is a power MOSFET primarily used in various applications such as power supplies, DC-DC converters, and motor drive circuits. It is suitable for high-efficiency switching applications in automotive, industrial, and consumer electronics. Additionally, its low on-resistance and fast switching capabilities make it ideal for use in renewable energy systems, like solar inverters, and in electric vehicles for battery management and control systems. Overall, it serves in fields requiring reliable power management and energy efficiency.
Package
The BSZ097N10NS5 is packaged in a DPAK (TO-252) format, which is a surface-mount package designed for power semiconductor devices.
