BUK9M17-30E,115

The BUK9M17-30E,115 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic switching and amplification applications. Manufactured by Nexperia, this MOSFET is characterized by its enhanced performance and reliability suitable for a range of applications, including power management in consumer electronics, automotive systems, and industrial equipment.
Key specifications of the BUK9M17-30E,115 include:
- Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_ds) of 30 volts and a continuous drain current (I_d) of 17 Amperes.
- RDS(on): It features a low on-state resistance, reducing power loss and improving efficiency.
- Package: The component is available in a surface-mount package, making it suitable for compact and high-density circuit designs.
- Applications: Its robust design and efficiency make it ideal for high-speed switching applications and power management tasks.
Overall, the BUK9M17-30E,115 is a versatile component that combines efficiency, durability, and functionality for modern electronic designs.

The BUK9M17-30E,115 is an N-channel MOSFET from Nexperia. Equivalent products may include:
1. Infineon: IPD30N06S4L-30
2. ON Semiconductor: NTMFS4935N
3. STMicroelectronics: STL30N3LLH6
4. Vishay: SiR466DP
Ensure to compare specifications like voltage, current, Rds(on), and package to confirm suitability for your application.

The BUK9M17-30E is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplification in electronic devices. Here are some of its key features:
1. Voltage and Current Ratings: Typically supports a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to certain amperes, often exceeding 10A, depending on packaging and thermal conditions.
2. RDS(on): Low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency.
3. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) that defines the minimum gate-to-source voltage required to turn on the MOSFET.
4. Fast Switching: Designed for high-speed operation, making it suitable for applications requiring rapid switching.
5. Thermal Resistance: Comes with established thermal resistance parameters to manage heat dissipation.
6. Package Type: Available in surface-mount packages like SO-8, allowing for efficient use of board space.
7. Applications: Commonly used in power management, DC-DC converters, and motor control circuits.
These features make the BUK9M17-30E suitable for a variety of power electronics applications.

The BUK9M17-30E,115 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Nexperia. It is commonly used for switching and amplification purposes in electronic circuits.
The MOSFET is housed in a TO-220 package, which typically has three pins:
1. Gate (G): It is the control terminal. By applying voltage to the gate, you can control the flow of current between the drain and source.
2. Drain (D): The terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Source (S): The terminal through which the current exits the MOSFET.
For this specific model, the maximum drain-source voltage (V_DS) is 30V, and it has a continuous drain current (I_D) of 100A, making it suitable for high-power applications. It provides efficient switching performance with minimal on-state resistance (R_DS(on)), which helps in reducing power loss during operation.

The BUK9M17-30E,115 is a part manufactured by Nexperia. Nexperia is a global semiconductor company that specializes in the production of discrete components, logic devices, and MOSFETs. The company focuses on delivering efficient and reliable semiconductor products for the automotive, computing, consumer electronics, and industrial markets. Nexperia was established as an independent entity in 2017, following its separation from NXP Semiconductors, and it is known for its emphasis on efficient manufacturing and high-volume production capabilities.

The BUK9M17-30E,115 is a MOSFET transistor commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation circuits to efficiently manage power distribution.
2. Automotive Electronics: Functions in electronic control units (ECUs), motor drives, and other automotive systems for efficient power switching.
3. Consumer Electronics: Incorporated in power supplies and battery-operated devices for efficient energy use.
4. Industrial Systems: Utilized in motor drives and control systems due to its robust performance and reliability.
5. Switching Applications: Ideal for high-speed switching due to its low on-resistance and fast switching capabilities.
These characteristics make the BUK9M17-30E,115 suitable for applications requiring efficient power control and conversion.

The BUK9M17-30E,115 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically packaged in a surface-mount DPAK (Discrete Packaging) form. This type of package is designed for efficient thermal performance and compact size, suitable for high-power and high-speed switching applications.