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C3M0015065K
+BOMSICFET N-CH 650V 120A TO247-4L
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メーカーウルフスピード株式会社
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メーカー品番 #C3M0015065K
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データシート C3M0015065K DataSheet
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パッケージ TO-247-4
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在庫状況3537
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Series | C3M™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 21mOhm @ 55.8A, 15V |
| Vgs(th)(Max) @ Id | 3.6V @ 15.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 188 nC @ 15 V |
| Vgs(Max) | +15V, -4V |
| Input Capacitance(Ciss)(Max) @ Vds | 5011 pF @ 400 V |
| Power Dissipation (Max) | 416W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
概要
Equivalent
- ROHM: SCT3017AL
- STMicroelectronics: SCTW35N65G2V
- Infineon: IMZ120R045M1
- ON Semiconductor: NTH4L015N065SC1
These alternatives offer similar voltage ratings and performance for power applications. Always verify datasheets for exact specifications.
Features
- Voltage/Current Rating: 900V, 150A
- Low On-Resistance (RDS(on)): Typically 6.5 mΩ
- High-Temperature Operation: Up to 175°C
- Fast Switching: Optimized for efficiency in high-frequency circuits
- Low Gate Charge (Qg): Reduces switching losses
- Half-Bridge Configuration: Integrates two MOSFETs for compact designs
- SiC Technology: Enables higher efficiency, power density, and thermal performance vs. silicon-based modules
Ideal for EV inverters, industrial power supplies, and renewable energy systems.
Pinout
- Pin Count: 4 pins (standard TO-247-4L configuration).
- Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage power terminal.
3. Source (S) – Current return path.
4. Kelvin Source (K) – Improves switching performance by reducing gate-loop inductance.
Designed for high-efficiency power applications like EV chargers and solar inverters.
Manufacturer
Wolfspeed, formerly part of Cree Inc., became an independent company in 2021. It focuses on power and RF solutions for industries like electric vehicles, renewable energy, and industrial applications. The C3M0015065K is part of their C3M™ MOSFET series, designed for high-power, high-frequency applications.
In short: Wolfspeed is a key innovator in SiC technology, and the C3M0015065K is one of their high-performance power transistors.
Application
1. Electric Vehicles (EVs) – Inverters, onboard chargers, and DC-DC converters.
2. Renewable Energy – Solar inverters and wind power systems.
3. Industrial Power Supplies – High-frequency switching and motor drives.
4. Data Centers – Efficient power distribution and UPS systems.
5. Aerospace & Defense – High-reliability power management.
Its advantages include high voltage tolerance, low switching losses, and thermal stability, making it ideal for demanding environments.