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CS1N60A4H
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メーカー無錫華潤華晶微電子
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メーカー品番 #CS1N60A4H
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データシート CS1N60A4H DataSheet
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在庫状況3393
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-252-2(DPAK) |
| Current - Continuous Drain(Id) | 800mA |
| Pd - Power Dissipation | 25W |
| Drain to Source Voltage | 600V |
| RDS(on) | 15Ω@10V,400mA |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V |
| Type | 1 N-channel |
概要
Description
If we consider CS1N60A4H as a semiconductor component, it might represent a specific model of a transistor or power MOSFET from a manufacturer. These components are typically used in power management applications and electronic circuits to switch or amplify electrical signals. They are essential in designing power supplies, motor controllers, and audio amplifiers, among other applications.
If the term refers to a course, it would likely cover foundational concepts of computer science, electronics, or semiconductor technology, introducing students to the principles and applications of such components. Topics might include circuit design, signal processing, and the role of these devices in modern technology.
For precise information, it would be essential to refer to the specific context or source where CS1N60A4H is mentioned.
Equivalent
1. IRF840 - another N-channel MOSFET with similar voltage and current ratings.
2. STP6N60 - a 600V, 6A N-channel MOSFET.
3. FQP2N60 - a 600V, 2A N-channel MOSFET.
4. 2N60 - commonly used as an equivalent for similar specifications.
Verify the datasheets to ensure compatibility in your specific application.
Features
1. Voltage and Current Ratings: It typically offers a high breakdown voltage, often around 600V, making it suitable for applications requiring high voltage tolerance.
2. RDS(on): The on-resistance is optimized to be low, which helps in reducing power loss and improving efficiency.
3. Fast Switching: It provides fast switching speeds, advantageous for applications needing quick response times.
4. High Efficiency: Designed to operate efficiently, minimizing energy loss during switching operations.
5. Thermal Performance: It includes features for effective heat dissipation, often involving enhanced thermal resistance characteristics.
6. Rugged Construction: The MOSFET is built to withstand high voltage and current stresses, ensuring durability and reliability.
7. Compact Package: Available in a compact package, facilitating space-saving designs in electronic circuits.
These features make the CS1N60A4H suitable for use in power supplies, motor controllers, and other applications requiring reliable high-voltage and high-speed switching performance.
Pinout
1. Gate (G): This is the control terminal that modulates the conductivity between the drain and source.
2. Source (S): This terminal is the source of carriers for the channel.
3. Drain (D): This terminal is where the carriers leave the channel.
The CS1N60A4H MOSFET is designed for applications requiring efficient high-speed switching. It is commonly used in power supplies, converters, and other electronic devices requiring efficient voltage regulation and switching capabilities.
Manufacturer
Application
1. Switching Power Supplies: Utilized in AC-DC and DC-DC converters for improved efficiency.
2. Lighting Systems: Suitable for ballasts and LED drivers due to its high-voltage handling.
3. Motor Drives: Used in inverters and motor control circuits for industrial and consumer applications.
4. Telecommunications: Provides efficient power management in base stations and networking equipment.
5. Consumer Electronics: Applied in power adapters and chargers for devices demanding robust power management.
Its design supports rapid switching and low energy loss, making it ideal for these applications.