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CSD59998Q4M
+BOM-
メーカーSTマイクロエレクトロニクス
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メーカー品番 #CSD59998Q4M
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在庫状況8497
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Brand | Texas Instruments |
| FactoryPackQuantity:FactoryPackQuantity | 2500 |
概要
Description
The course usually emphasizes collaboration, encouraging students to work in teams to enhance their learning experience and foster innovation. Key topics may include data analysis, machine learning, and software development, depending on the specific focus of the course.
Overall, CSD59998Q4M prepares students for advanced roles in academia or industry by equipping them with the necessary skills and knowledge to tackle complex problems in their field.
Equivalent
Features
1. High Voltage Rating: Supports drain-source voltages up to 80V, making it suitable for various voltage applications.
2. Low On-Resistance: Offers low R_DS(on) values, which enhances efficiency by minimizing power loss during operation.
3. Fast Switching Speed: Optimized for rapid switching, allowing for improved performance in high-frequency applications.
4. Thermal Management: Features a robust thermal performance, enabling operation at elevated temperatures without compromising reliability.
5. Package Type: Available in a compact QFN package, facilitating space-saving designs.
6. Gate Threshold Voltage: Suitable gate voltage thresholds enable efficient drive capabilities with low gate drive power.
7. Versatile Applications: Ideal for use in DC-DC converters, motor drives, and other power-related circuits.
These features make the CSD59998Q4M a reliable choice for engineers looking for efficient and effective power solutions in their designs.
Pinout
1. Gate (G): Controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The output terminal where current flows out when the device is on.
3. Source (S): The terminal where current flows in when the device is conducting.
4. Thermal Pad (TP): Provides a means to dissipate heat; it is used for improved thermal management and should be connected to a heat sink or PCB ground.
5. Body Diode: Integrated within the MOSFET structure, it allows current to flow in the reverse direction when the device is off.
This device is suitable for applications such as power management and DC-DC converters due to its low on-resistance and high efficiency.