仕様
| 属性 | 値 |
| Supplier | Texas Instruments |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 5V Drive |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 15A |
| Rds On(Max) @ Id Vgs | 14.3mOhm @ 4A, 8V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.6nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 662pF @ 15V |
| Power - Max | 6W |
| Operating Temperature | 125°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
Introduction to CSD87333Q3D
- Type: TI Smart Power Stage (SPS) that combines two N-channel MOSFETs with an integrated gate driver in a single package.
- Purpose: Designed for synchronous buck regulators and motor-control power stages; reduces BOM and simplifies PCB layout.
- Key features: high-side/low-side MOSFETs, built-in protection (overcurrent, thermal shutdown, undervoltage lockout), shoot-through prevention, optional current sensing, PWM-compatible gate drive.
- Benefits: lower conduction losses, compact footprint, easier routing, and faster time-to-market.
- Typical applications: CPU/core voltage regulators, telecom/computing power modules, automotive/industrial power supplies.
- How to use: drive with a PWM signal, provide proper supply to the gate driver, and leverage protection and sensing features as needed; plan for adequate heat sinking.
- Learn more: consult the TI datasheet, application notes, and reference designs for exact ratings and usage guidance.
Note: Always verify the exact voltage/current ratings and packaging in the official datasheet.
- Type: TI Smart Power Stage (SPS) that combines two N-channel MOSFETs with an integrated gate driver in a single package.
- Purpose: Designed for synchronous buck regulators and motor-control power stages; reduces BOM and simplifies PCB layout.
- Key features: high-side/low-side MOSFETs, built-in protection (overcurrent, thermal shutdown, undervoltage lockout), shoot-through prevention, optional current sensing, PWM-compatible gate drive.
- Benefits: lower conduction losses, compact footprint, easier routing, and faster time-to-market.
- Typical applications: CPU/core voltage regulators, telecom/computing power modules, automotive/industrial power supplies.
- How to use: drive with a PWM signal, provide proper supply to the gate driver, and leverage protection and sensing features as needed; plan for adequate heat sinking.
- Learn more: consult the TI datasheet, application notes, and reference designs for exact ratings and usage guidance.
Note: Always verify the exact voltage/current ratings and packaging in the official datasheet.
Features
Here are the typical features of TI’s CSD87333Q3D:
- Dual N-channel NexFET power MOSFETs in a 3x3 mm QFN (Q3D) package
- Drain-Source voltage rating: Vds = 30 V
- Very low on-resistance: Rds(on) ≈ 3.3 mΩ (typ); ≈ 3.9 mΩ (max) per FET
- High current capability per FET (several amps, depending on PCB/heatsinking)
- Low gate drive energy: low gate charge for efficient switching
- Wide operating temperature: -40°C to +125°C
- RoHS-compliant and suitable for automotive/industrial use
- Applications: DC-DC converters, load switches, motor drivers, general power-switching
Note: Exact numbers can vary by lot/variant; consult the datasheet for precise specs.
- Dual N-channel NexFET power MOSFETs in a 3x3 mm QFN (Q3D) package
- Drain-Source voltage rating: Vds = 30 V
- Very low on-resistance: Rds(on) ≈ 3.3 mΩ (typ); ≈ 3.9 mΩ (max) per FET
- High current capability per FET (several amps, depending on PCB/heatsinking)
- Low gate drive energy: low gate charge for efficient switching
- Wide operating temperature: -40°C to +125°C
- RoHS-compliant and suitable for automotive/industrial use
- Applications: DC-DC converters, load switches, motor drivers, general power-switching
Note: Exact numbers can vary by lot/variant; consult the datasheet for precise specs.
Manufacturer
- Manufacturer: Texas Instruments (TI).
- What kind of company: An American multinational semiconductor company that designs and manufactures analog, embedded processing, and power-management ICs (including NexFET power MOSFETs).
- What kind of company: An American multinational semiconductor company that designs and manufactures analog, embedded processing, and power-management ICs (including NexFET power MOSFETs).
Application
CSD87333Q3D is a NexFET power MOSFET used as the switching element in DC-DC converters. Typical application areas include:
- High-efficiency synchronous buck/VRM stages for CPUs/GPUs, memory, and other POL regulators
- Point-of-load power rails in notebooks, desktops, and servers
- Power modules for data centers, telecom, and networking equipment
- Automotive and industrial power-management systems requiring fast switching and low losses
- General DC-DC converter designs (high-side/low-side switches, load switches) in modular power solutions
- High-efficiency synchronous buck/VRM stages for CPUs/GPUs, memory, and other POL regulators
- Point-of-load power rails in notebooks, desktops, and servers
- Power modules for data centers, telecom, and networking equipment
- Automotive and industrial power-management systems requiring fast switching and low losses
- General DC-DC converter designs (high-side/low-side switches, load switches) in modular power solutions
Package
CSD87333Q3D comes in a 3 mm × 3 mm QFN package (QFN-16) with an exposed pad.
