CY7C199D-10VXI

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CY7C199D-10VXI

+BOM

IC SRAM 256KBIT PARALLEL 28SOJ

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Package / Case Tape & Reel (TR),Bulk,Tube
Part Status Active
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 256Kb (32K x 8)
Memory Interface Parallel
Write Cycle Time - Word Page 10ns
Access Time 10 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

概要

Description

The CY7C199D-10VXI is a high-performance, 32K x 8-bit static RAM (random access memory) chip. It is part of Cypress Semiconductor's CY7C199D family, designed to provide fast and reliable memory solutions. This SRAM chip operates at a voltage range of 4.5V to 5.5V, making it suitable for a variety of electronic applications. It features a fast access time of 10 nanoseconds, enabling quick data retrieval and efficient processing in high-speed applications.
The CY7C199D-10VXI is housed in a 28-pin SOJ (Small Outline J-Lead) package, which offers a compact size for easy integration into circuit boards. Its static nature means it does not require clock signals or refreshing, providing ease of use and maintaining data integrity over time. This makes it ideal for use in systems requiring reliable memory storage, such as embedded systems, communication devices, and computing equipment. The chip also features low power consumption, making it suitable for battery-powered applications. Overall, the CY7C199D-10VXI offers a combination of speed, efficiency, and reliability for various memory-intensive tasks.

Equivalent

The CY7C199D-10VXI is a 32K x 8 high-speed static RAM. Equivalent products would include:
1. AS7C256-10JCN from Alliance Memory
2. IS61C256AH-10N from ISSI (Integrated Silicon Solution Inc.)
3. HM62256A series from Renesas (or similar legacy manufacturers)
4. W24257AK-10 from Winbond
These alternatives share similar memory configurations and speed grades. As always, verify pin compatibility and electrical characteristics before substitutions.

Features

The CY7C199D-10VXI is a high-performance, 32K x 8 static RAM (SRAM) chip. Key features include:
1. Fast Access Time: It offers a speed of 10 nanoseconds, ensuring rapid data retrieval and storage.
2. Low Power Consumption: Designed for efficiency, it consumes minimal power during operation, making it suitable for battery-powered applications.
3. High Reliability: Equipped with CMOS technology, it provides high durability and reliability over extended periods.
4. Wide Voltage Range: Operates efficiently within a voltage range of 4.5V to 5.5V.
5. TTL-Compatible Inputs and Outputs: Ensures easy interfacing with various digital systems.
6. Automatic Power-Down: Features automatic power-down capability to further reduce power usage when the device is not in active operation.
7. Industrial Temperature Range: Operates within a temperature range of -40°C to 85°C, making it suitable for industrial applications.
8. Package: Available in a 28-pin SOJ (Small Outline J-Lead) package.
These features make the CY7C199D-10VXI ideal for applications requiring fast and reliable memory with low power demands.

Pinout

The CY7C199D-10VXI is a high-performance SRAM (Static Random-Access Memory) chip. It comes in a 28-pin SOJ (Small Outline J-lead) package. The device offers a storage capacity organized in a 32K x 8-bit configuration, making it suitable for applications requiring fast data access and storage.
Key functions and pin assignments include:
- Address Inputs (A0-A14): Used to specify the memory location for data access.
- Data Inputs/Outputs (IO0-IO7): Bidirectional pins for inputting data into and outputting data from the SRAM.
- Chip Enable (CE): Activates the chip, enabling it to respond to read and write commands.
- Write Enable (WE): Controls the write operation; when active, data can be written to the specified address.
- Output Enable (OE): Enables the output buffers for reading data from the SRAM.
- Power Supply (VCC): Provides the necessary power for chip operation.
- Ground (VSS): Ground reference for the circuit.
The CY7C199D-10VXI is primarily used in applications requiring reliable and fast memory access, with a focus on performance in computing and communication devices.

Manufacturer

The CY7C199D-10VXI is manufactured by Cypress Semiconductor, which is now part of Infineon Technologies. Cypress Semiconductor was a company that specialized in the design and manufacturing of a wide range of semiconductor products, including memory and embedded systems. Its product portfolio included static RAM (SRAM), NOR flash memory, programmable system-on-chip solutions, and various other semiconductor technologies.
In April 2020, Infineon Technologies, a German semiconductor company, completed its acquisition of Cypress Semiconductor. Infineon is known for its broad range of semiconductor solutions, with applications across automotive, industrial, and consumer electronics sectors. The acquisition helped Infineon expand its capabilities in the areas of microcontrollers, connectivity components, and software ecosystems, leveraging Cypress's expertise in these fields.

Application

The CY7C199D-10VXI is a high-speed CMOS static RAM, often used in applications requiring fast data access and storage. Key application areas include:
1. Networking Equipment: Utilized in routers and switches for buffering and data caching.
2. Embedded Systems: Provides reliable memory in microcontroller-based applications.
3. Industrial Automation: Used in control systems for real-time data processing.
4. Communication Devices: Supports storage needs in devices like modems and base stations.
5. Consumer Electronics: Employed in various gadgets requiring quick memory access.
6. Medical Devices: Assists in data management for diagnostic and monitoring equipment.
These applications benefit from the chip's fast access time and low power consumption.

Package

The CY7C199D-10VXI is a 32K x 8 Static RAM (SRAM) chip produced by Cypress Semiconductor. It comes in a 28-pin Small Outline J-Lead (SOJ) package, which is suitable for surface mounting.

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