画像は参考用です
DGD05473FN-7
+BOMIC GATE DRV HALF-BRDG DFN3030-10
-
メーカーアナログ・デバイセズ
-
メーカー品番 #DGD05473FN-7
-
データシート DGD05473FN-7 DataSheet
-
在庫状況7186
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Obsolete |
| Base Product Number | DGD05473 |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | MOSFET (N-Channel) |
| Voltage - Supply | 0.3V ~ 60V |
| Logic Voltage - VIL, VIH | 0.8V, 2.4V |
| Current - Peak Output (Source, Sink) | 1.5A, 2.5A |
| Input Type | CMOS/TTL |
| Rise / Fall Time (Typ) | 16ns, 12ns |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package | 10-WFDFN Exposed Pad |
| Supplier Device Package | W-DFN3030-10 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| High Side Voltage - Max (Bootstrap) | 50 V |
概要
Description
Key specifications include a wide supply voltage range, high peak output current, and the ability to drive multiple devices in parallel. The device incorporates various protection features, such as under-voltage lockout (UVLO) and thermal shutdown, ensuring reliable operation.
DGD05473FN-7 is optimized for efficiency, reducing switching losses and improving overall system performance. Its compact package design simplifies integration into circuit boards and enhances thermal management.
Engineers often select this driver for its robustness and adaptability across diverse application scenarios, including renewable energy systems and electric vehicles.
Equivalent
Features
1. Dual Output: Capable of driving two N-channel MOSFETs simultaneously.
2. High Voltage Capability: Supports up to 100V, making it suitable for automotive and industrial applications.
3. Low On-Resistance: Ensures efficient power management with minimal voltage drop.
4. Fast Switching: Designed for quick turn-on and turn-off, optimizing performance in PWM applications.
5. Under-Voltage Lockout (UVLO): Protects the driver by preventing operation below a certain voltage threshold.
6. Integrated Charge Pump: Allows for gate drive voltages higher than the supply voltage, enhancing MOSFET performance.
7. Thermal Protection: Built-in thermal shutdown feature for enhanced reliability.
8. Compact Package: Available in a thermally efficient package, facilitating space-constrained designs.
These features make the DGD05473FN-7 ideal for motor control, power management, and other high-side switching applications.
Pinout
1. IN: Input signal for controlling the driver.
2. VDD: Positive supply voltage for the driver.
3. GND: Ground reference for the circuit.
4. OUT: Output signal that drives the gate of the MOSFET.
5. NC: No connection; typically left floating.
This driver provides fast switching times and high peak currents, making it suitable for high-frequency applications.
Manufacturer
Founded in 1930 and headquartered in Dallas, Texas, Texas Instruments serves various markets, including automotive, communications, industrial, and consumer electronics. TI is particularly recognized for its innovation and commitment to research and development, making it a key player in the electronics industry. The company also focuses on sustainability and corporate responsibility, aiming to reduce its environmental impact while providing high-quality products and solutions.
Application
1. Motor Drives: Used for controlling DC and brushless motors in industrial and consumer applications.
2. Power Supply Circuits: Facilitates efficient operation in switch-mode power supplies (SMPS).
3. Battery Management Systems: Supports switching in battery protection and management circuits.
4. LED Drivers: Drives high-power LEDs in lighting applications.
5. Renewable Energy Systems: Utilized in inverters for solar and wind energy conversion.
Its fast switching capabilities and robust design make it suitable for various electronic applications requiring efficient gate driving.