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DMG2305UX-7
+BOMMOSFET P-CH 20V 4.2A SOT23
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メーカーアナログ・デバイセズ
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メーカー品番 #DMG2305UX-7
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データシート DMG2305UX-7 DataSheet
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パッケージ SOT-23-3
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在庫状況5636
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 4.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 52mOhm @ 4.2A, 4.5V |
| Vgs(th)(Max)@Id | 900mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10.2 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 808 pF @ 15 V |
| PowerDissipation(Max) | 1.4W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
概要
Description
The DMG2305UX-7 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It is characterized by its compact size, low on-resistance, and high-speed switching capabilities, making it suitable for a variety of applications, including power management, load switching, and DC-DC conversion tasks.
Key features of the DMG2305UX-7 include a maximum drain-source voltage (V_DS) of around -20V, a continuous drain current (I_D) of approximately -3.2A, and a low gate threshold voltage, which allows it to operate efficiently with lower gate drive voltages. Its packaging, often a small SOT-23, enhances its suitability for space-constrained designs.
The DMG2305UX-7 is favored in various consumer electronics, automotive, and industrial applications due to its robustness and efficiency. Its P-channel configuration allows it to provide high-side switching capabilities, which is essential for certain circuit designs where the load needs to be connected directly to the ground.
Key features of the DMG2305UX-7 include a maximum drain-source voltage (V_DS) of around -20V, a continuous drain current (I_D) of approximately -3.2A, and a low gate threshold voltage, which allows it to operate efficiently with lower gate drive voltages. Its packaging, often a small SOT-23, enhances its suitability for space-constrained designs.
The DMG2305UX-7 is favored in various consumer electronics, automotive, and industrial applications due to its robustness and efficiency. Its P-channel configuration allows it to provide high-side switching capabilities, which is essential for certain circuit designs where the load needs to be connected directly to the ground.
Equivalent
The DMG2305UX-7 is a P-channel MOSFET. Equivalent products can include:
1. AO3401 from Alpha & Omega Semiconductor
2. IRLML6401 from Infineon Technologies
3. SI2305 from Vishay
4. FDN338P from ON Semiconductor
These components have similar voltage, current ratings, and package types, making them potential substitutes. Always verify the datasheets to ensure compatibility with your specific application requirements.
1. AO3401 from Alpha & Omega Semiconductor
2. IRLML6401 from Infineon Technologies
3. SI2305 from Vishay
4. FDN338P from ON Semiconductor
These components have similar voltage, current ratings, and package types, making them potential substitutes. Always verify the datasheets to ensure compatibility with your specific application requirements.
Features
The DMG2305UX-7 is a P-channel MOSFET transistor known for its efficiency and compact design. Key features include:
1. Low On-Resistance: It offers a low R_DS(on), enhancing power efficiency by minimizing energy loss during operation.
2. High-Speed Switching: The device supports fast switching capabilities, which is ideal for high-frequency applications.
3. Compact Package: It comes in a small SOT-23 package, making it suitable for space-constrained applications.
4. Thermal Efficiency: The transistor is designed to handle thermal dissipation effectively, ensuring reliable performance over a range of operating conditions.
5. Low Gate Charge: This feature contributes to reduced power consumption and enables quicker transitions between on and off states.
6. Wide Operating Temperature Range: It is built to function efficiently over a broad temperature range, from -55°C to 150°C.
7. Applications: Common uses include load switching, battery management systems, and DC-DC converters.
These features make the DMG2305UX-7 a versatile component in various electronic applications requiring efficient power management.
1. Low On-Resistance: It offers a low R_DS(on), enhancing power efficiency by minimizing energy loss during operation.
2. High-Speed Switching: The device supports fast switching capabilities, which is ideal for high-frequency applications.
3. Compact Package: It comes in a small SOT-23 package, making it suitable for space-constrained applications.
4. Thermal Efficiency: The transistor is designed to handle thermal dissipation effectively, ensuring reliable performance over a range of operating conditions.
5. Low Gate Charge: This feature contributes to reduced power consumption and enables quicker transitions between on and off states.
6. Wide Operating Temperature Range: It is built to function efficiently over a broad temperature range, from -55°C to 150°C.
7. Applications: Common uses include load switching, battery management systems, and DC-DC converters.
These features make the DMG2305UX-7 a versatile component in various electronic applications requiring efficient power management.
Pinout
The DMG2305UX-7 is a P-channel MOSFET transistor. It typically comes in a SOT-23 package which has 3 pins. The functions of these pins are as follows:
1. Gate (G): This pin is used to drive the MOSFET on or off. Applying the appropriate voltage to the gate controls the flow of current between the drain and source.
2. Source (S): This pin is connected to the negative side of the input voltage for P-channel MOSFETs. In operation, the source is connected to the higher voltage.
3. Drain (D): This pin is where the current flows out when the MOSFET is turned on. In P-channel MOSFETs, the current flows from source to drain when the device is active.
The DMG2305UX-7 is typically used in applications requiring efficient switching and low on-resistance, such as power management in portable devices.
1. Gate (G): This pin is used to drive the MOSFET on or off. Applying the appropriate voltage to the gate controls the flow of current between the drain and source.
2. Source (S): This pin is connected to the negative side of the input voltage for P-channel MOSFETs. In operation, the source is connected to the higher voltage.
3. Drain (D): This pin is where the current flows out when the MOSFET is turned on. In P-channel MOSFETs, the current flows from source to drain when the device is active.
The DMG2305UX-7 is typically used in applications requiring efficient switching and low on-resistance, such as power management in portable devices.
Manufacturer
The DMG2305UX-7 is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. The company focuses on delivering innovative semiconductor solutions to the automotive, industrial, computing, consumer electronics, and communications markets. Diodes Incorporated is known for its commitment to efficient production, high-quality manufacturing, and a comprehensive portfolio of products that support a wide range of applications.
Application
The DMG2305UX-7 is a P-channel MOSFET commonly used in applications like load switching, power management, and DC-DC conversion. Its compact size and efficient performance make it suitable for battery-operated devices, handheld electronics, and portable consumer gadgets. Additionally, it can be utilized in signal processing circuits and logic level conversion tasks due to its low on-resistance and fast switching capabilities. Its design makes it ideal for space-constrained applications, offering robust performance in various electronic circuits requiring efficient power control.
Package
The DMG2305UX-7 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in a small SOT-23 package, which is commonly used for surface-mount applications. This package type is compact and suitable for circuits requiring efficient space utilization.
