DMN10H220L-7

画像は参考用です

DMN10H220L-7

+BOM

MOSFET N-CH 100V 1.4A SOT23

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性 値
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 1.4A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 220mOhm @ 1.6A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 8.3 nC @ 10 V
Vgs(Max) ±16V
Input Capacitance(Ciss)(Max) @ Vds 401 pF @ 25 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3

概要

Description

The DMN10H220L-7 is a high-performance N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 220A (pulsed)
- Low On-Resistance (RDS(on)): Typically 7mΩ (at VGS=10V)
- Fast Switching: Optimized for efficiency in high-frequency circuits
- Package: TO-252 (DPAK) for compact PCB mounting
Ideal for DC-DC converters, motor control, and power supplies, this MOSFET offers robust performance with low conduction losses. Its high current-handling capability and thermal efficiency make it suitable for demanding industrial and automotive applications.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the DMN10H220L-7 (a 100V N-channel MOSFET) include:
- Infineon IPD90N04S4-07
- Vishay SiHP10N60E
- ON Semiconductor NTMFS5H410NL
- STMicroelectronics STP10NK60Z
These alternatives offer similar voltage, current, and package compatibility. Always verify datasheet specifications for exact matching.

Features

The DMN10H220L-7 is a 100V N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 10A (continuous)
- Low On-Resistance (RDS(on)): 22mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-speed applications
- Gate Charge (Qg): Low (typ. 13nC) for efficient switching
- Package: TO-252 (DPAK) for easy mounting
- Avalanche Energy Rated: Robust against inductive loads
- Logic-Level Gate Drive: Compatible with 5V drive
Ideal for power switching, motor control, and DC-DC converters. Compact and efficient for space-constrained designs.

Manufacturer

The DMN10H220L-7 is a power MOSFET manufactured by Diodes Incorporated, a global semiconductor company specializing in high-performance discrete, analog, and mixed-signal products. Diodes Inc. focuses on power management, signal integrity, and energy-efficient solutions for consumer electronics, computing, automotive, and industrial applications. Known for cost-effective and reliable components, the company serves a broad range of industries with innovation-driven designs.

Application

The DMN10H220L-7 is a high-voltage N-channel MOSFET designed for power management applications. Key areas include:
1. Switching Power Supplies – Used in AC/DC and DC/DC converters.
2. Motor Control – Efficient driving in industrial and automotive systems.
3. LED Lighting – Power regulation in high-brightness LED drivers.
4. Battery Management – Protection and charging circuits in portable devices.
5. Renewable Energy – Inverters for solar and wind power systems.
Its high voltage (220V) and low on-resistance make it suitable for energy-efficient, high-power applications.

Package

The DMN10H220L-7 is a DFN1006-7 package type, which is a SOT-723 (Super Mini Mold) surface-mount device (SMD). It features a compact 3-pin design with dimensions of approximately 1.0 x 0.6 x 0.37 mm, commonly used for small-signal transistors or diodes in space-constrained applications.

DMN10H220L-7に関連する製品

  • 迅速な見積もり

  • 見積もり依頼を送信 DMN10H220L-7 このフォームをご利用ください。12時間以内にご返信いたします。